Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

Keywords

Epitaxy, Materials science, Pulsed laser deposition, Orthorhombic crystal system, Optoelectronics

References

• Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnOHiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita — 2000
• Deep-ultraviolet transparent conductive β-Ga2O3 thin filmsMasahiro Orita, Hiromichi Ohta, Masahiro Hirano — 2000
• High-Resolution X-Ray Scattering from Thin Films and MultilayersV. Holý, Baumbach, T, Pietsch, U — 1998
• Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystalsNaoyuki Ueda, Hideo Hosono, Ryuta Waseda — 1997
• Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersA. Kinoshita, Hideki Hirayama, M. Ainoya — 2000
• Breaking the Diffraction Barrier: Optical Microscopy on a Nanometric ScaleEric Betzig, J. K. Trautman, T.D. Harris — 1991
• High Mobility Thin Film Transistors with Transparent ZnO ChannelsJunya Nishii, Faruque M. Hossain, Shingo Takagi — 2003
• Transparent thin-film transistors with zinc indium oxide channel layerNicole L. Dehuff, E. S. Kettenring, David Hong — 2005
• Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperaturesMasahiro Orita, Hidenori Hiramatsu, Hiromichi Ohta — 2002
• Microwave performance evaluation of diamond surface channel FETsM. Kubovič, Makoto Kasu, Ingmar Kallfass — 2004
• Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsKenji Nomura, Hiromichi Ohta, Akihiro Takagi — 2004
• A silicon nanocrystals based memorySandip Tiwari, Farhan Rana, Hussein Hanafi — 1996
• Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnOAtsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma — 2004
• Fluorine doped silica glass fiber for deep ultraviolet lightMasanori Oto, Sinya Kikugawa, Taisuke Miura — 2004
• Crystal Structure of β‐Ga2O3S. Geller — 1960
• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorKenji Nomura, Hiromichi Ohta, Kazushige Ueda — 2003
• Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templatesS. Arulkumaran, Masahiro Sakai, Takashi Egawa — 2002
• Crystal structure of κ-alumina: an X-ray powder diffraction,TEM and NMR studyBenoîst Ollivier, R. Retoux, Philippe Lacorre — 1997
• Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel StructureShinsuke Harada, Seiji Suzuki, Junji Senzaki — 2002
• ZnO-based transparent thin-film transistorsRandy Hoffman, B. Norris, John F. Wager — 2003

Cited by

• Ga_2 O_3 Nanowire Photodetector Prepared on SiO_2/ Si TemplateYa Ling Wu, Shoou‐Jinn Chang, W. Y. Weng — 2013
• Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 SubstrateKentaro Kaneko, H. Kawanowa, Hiroshi Ito — 2012
• Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVDWei Mi, Jin Ma, Zhao Li — 2015
• Cross‐sectional TEM imaging of β‐Ga2O3 thin films formed on c‐plane and a‐plane sapphire substratesShinji Nakagomi, Yoshihiro Kokubun — 2013
• Temperature‐dependent electrical characterization of exfoliated β‐Ga2O3 micro flakesR. Mitdank, S. Dusari, Christine Bülow — 2014
• Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser depositionDaniel Splith, Stefan Müller, Florian Schmidt — 2014
• Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor DepositionKazuaki Akaiwa, Shizυo Fujita — 2012
• Site preference of cation vacancies in Mn-doped Ga2O3 with defective spinel structureHiroyuki Hayashi, Rong Huang, Fumiyasu Oba — 2012
• Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrateShinji Nakagomi, Yoshihiro Kokubun — 2012
• Epitaxial growth of Mn-doped γ-Ga_2O_3 on spinel substrateHiroyuki Hayashi, Rong Huang, Fumiyasu Oba — 2011
• Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVDXuejian Du, Zhao Li, Caìna Luan — 2015
• Experimental analysis of Ga2O3: Ti films grown on Si and glass substratesA.A. Dakhel, W.E. Alnaser — 2013
• Oxide Semiconductor Thin‐Film Transistors: A Review of Recent AdvancesElvira Fortunato, Pedro Barquinha, Rodrigo Martins — 2012
• Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Wei Mi, Caìna Luan, Zhao Li — 2013
• Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga _2O_3 NanowiresHan-Ting Hsueh, Wen‐Yin Weng, Tsung-Ying Tsai — 2013
• Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesMasataka Higashiwaki, Kohei Sasaki, Akito Kuramata — 2012
• Plasma enhanced atomic layer deposition of Ga2O3 thin filmsRanjith K. Ramachandran, Jolien Dendooven, Jonas Botterman — 2014
• Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substratesLingyi Kong, Jin Ma, Caìna Luan — 2012
• Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser depositionFabi Zhang, Katsuhiko Saito, Tooru Tanaka — 2014
• Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectorsYoshihiro Kokubun, Kasumi Miura, Fumie Endo — 2007

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