Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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- Type
- article
- Published
- 2004-12-19
- Cited by
- 1,971
- References
- 64
- OpenAlex
- https://openalex.org/W2050897202
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:137286849
Keywords
Materials science, Optoelectronics, Electroluminescence, Dopant, Epitaxy
References
- Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
- MgxZn1−xO as a II–VI widegap semiconductor alloy
- Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
- Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy
- Hydrogen as a cause of doping in zinc oxide
- Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature
- Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga
- Majority‐carrier mobilities in undoped and n ‐type doped ZnO epitaxial layers
- Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers
- Well-width dependence of radiative and nonradiative lifetimes in ZnO-based multiple quantum wells
- Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates
- Optical spectra in ZnO thin films on lattice-matched substrates grown with laser-MBE method
- Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
- Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin films
- Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates
- An oxide-diluted magnetic semiconductor: Mn-doped ZnO
- High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser
- Combinatorial Laser Molecular Beam Epitaxy (MBE) Growth of Mg–Zn–O Alloy for Band Gap Engineering
- Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
- Optical properties of ZnO:Al epilayers: Observation of room-temperature many-body absorption-edge singularity
Cited by
- White light-emitting diodes fabricated utilizing hybrid polymer–colloidal ZnO quantum dots
- ZnO‐Microrod/p‐GaN Heterostructured Whispering‐Gallery‐Mode Microlaser Diodes
- Large degree of polarization of photoluminescence caused by anisotropic strain in nonpolar a-plane MgxZn1-xO layers grown by plasma-assisted molecular beam epitaxy.
- Electronic structure of stoichiometric and reduced ZnO from periodic relativistic all electron hybrid density functional calculations using numeric atom‐centered orbitals
- Correlations of charge neutrality level with electronic structure and p-d hybridization
- Exciton-polariton light-emitting diode based on a ZnO microwire.
- Electrical and Optical Properties of p-type ZnO:P Fabricated by Ampoule-tube Vapor-state Diffusion
- Ultrawide range tuning of direct band gap in MgZnO monolayer via electric field effect
- Influence of different carrier gases on the properties of ZnO films grown by MOCVD
- Spectroscopie optique de l'oxyde de zinc
- Highly Efficient CIGS Based Devices for Solar Hydrogen Production and Size Dependent Properties of ZnO Quantum Dots
- Mécanismes de croissance et défauts cristallins dans les structures à nanofils de ZnO pour les LED
- Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO
- Solid State Material Systems for Light Emission and Light Detection
- Realization and Analysis of p-Type ZnO:Al Thin Film by RF Magnetron Sputtering
- V-I Curves of p-ZnO:Al/n-ZnO:Al Junction Fabricated by RF Magnetron Sputtering
- Influence des défauts sur les propriétés optiques et électroniques des nanoparticules de ZnO
- Amorphous Metal-Oxide Based Thin Film Transistors on Metal Foils: Materials, Devices and Circuits Integration
- 酸化物・窒化物半導体における点欠陥の電子構造と機能 —第一原理計算による新しい理解—
- Giant enhancement of the n-type conductivity in single phase p-type ZnO:N thin films by intentionally created defect clusters and pairs
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