Ga2O3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

Keywords

Molecular beam epitaxy, Sapphire, Ohmic contact, Materials science, Photodetector

References

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• Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxyHang-Ju Ko, Takafumi Yao, Yefan Chen — 2002
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• Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamondMeiyong Liao, Yasuo Koide, José Alvarez — 2007
• Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys (x≃0.5) and Their Application to Solar-Blind Region PhotodetectorsTsuyoshi Takagi, Hiroshi Tanaka, Shizυo Fujita — 2003
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Cited by

• Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 filmsRyo Wakabayashi, Takayoshi Oshima, Mai Hattori — 2015
• Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealingDaishi Shiojiri, Ryosuke Yamauchi, Daiji Fukuda — 2015
• Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 SubstrateKentaro Kaneko, H. Kawanowa, Hiroshi Ito — 2012
• Photoelectric properties of β-Ga2O3 thin films annealed at different conditionsTuo Sheng, Xingzhao Liu, L. X. Qian — 2015
• Electrical properties of Si doped Ga2O3 films grown by pulsed laser depositionFabi Zhang, Katsuhiko Saito, Tooru Tanaka — 2015
• Crystal orientations of β‐Ga2O3 thin films formed on n‐plane sapphire substratesShinji Nakagomi, Satoru Kaneko, Yoshihiro Kokubun — 2015
• Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxyV. Gottschalch, Kilian Mergenthaler, G. Wagner — 2009
• Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam EpitaxyKohei Sasaki, Akito Kuramata, Takekazu Masui — 2012
• Cross‐sectional TEM imaging of β‐Ga2O3 thin films formed on c‐plane and a‐plane sapphire substratesShinji Nakagomi, Yoshihiro Kokubun — 2013
• Electrochemical Deposition of GaSxOy Thin FilmsSupria Chowdhury, M. Ichimura — 2009
• Crossed Ga2O3/SnO2 multiwire architecture: a local structure study with nanometer resolution.Gema Martínez‐Criado, Jaime Segura‐Ruiz, Manh-Hung Chu — 2014
• Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin filmsDaoyou Guo, Xiaolong Zhao, Yusong Zhi — 2016
• The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxyPatrick Vogt, Oliver Bierwagen — 2015
• Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3Christian Kranert, Marcus Jenderka, J. Lenzner — 2015
• Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor DepositionKazuaki Akaiwa, Shizυo Fujita — 2012
• Site preference of cation vacancies in Mn-doped Ga2O3 with defective spinel structureHiroyuki Hayashi, Rong Huang, Fumiyasu Oba — 2012
• MBE grown Ga2O3 and its power device applicationsKohei Sasaki, Masataka Higashiwaki, Akito Kuramata — 2013
• Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin filmShinji Nakagomi, Tsubasa Sai, Yoshihiro Kokubun — 2013
• Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectorsFei-Peng Yu, Sin‐Liang Ou, Dong‐Sing Wuu — 2015
• Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxyYuichi Oshima, Encarnaciόn G. Vίllora, Kiyoshi Shimamura — 2015

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