Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Keywords

Amorphous solid, Photoconductivity, Materials science, Band gap, Semiconductor

References

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Cited by

• Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.Daniel Truempy — 2018
• An electrically driven structural phase transition in single Ag2Te nanowire devices.Omar A. Ramírez — 2019
• Nonlocal and collective phenomena in the plasmons of metallic nanostructures: With application to ultrasensitive biosensing and nonlinear nano-opticsC. David — 2014
• Chalcogenide thin film materials for next generation data storageRobert E. Simpson — 2008
• Charge transport in phase change materialsPeter Jost, Matthias Wuttig — 2013
• Confined nanoscale chalcogenide phase change material and memoryRuomeng Huang — 2015
• Current-Driven Monte Carlo Simulation of Conduction in Switching ChalcogenidesEnrico Piccinini, Fabrizio Buscemi — 2011
• Ab initio investigation of phase change materials : structural, electronic and kinetic propertiesWei Zhang, Riccardo Mazzarello — 2014
• Investigations of binary and ternary phase change alloys for future memory applicationsPascal Rausch, Matthias Wuttig — 2013
• Electrical Conductivity Discontinuity at Melt in Phase Change MemoryL. Crespi, A. Ghetti, Mattia Boniardi — 2014
• Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometryJun-Woo Park, Seoung Ho Baek, Tae Dong Kang — 2008
• Structural fingerprints of electronic change in the phase-change-material: Ge2Sb2Te5Bin Cai, D. A. Drabold, Stephen R. Elliott — 2010
• Amorphization dynamics of Ge2Sb2T35 films under nano- and femtosecond laser pulse irradiationJan Siegel, Wojciech Gawełda, Daniel Puerto — 2008
• Effects of hydrostatic pressure on the electrical properties of hexagonal Ge2Sb2Te5: Experimental and theoretical approachesBo Xu, Yutai Su, Zenghong Liu — 2011
• Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentrationLina Fang, Zhang Zheng, Jisheng Pan — 2009
• High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge2Sb2Te5Min‐Cherl Jung, H. J. Shin, Kyu Hong Kim — 2006
• Vibrational properties of hexagonal Ge2Sb2Te5 from first principlesGabriele C. Sosso, S. Caravati, Carlo Gatti — 2009
• Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devicesCheolkyu Kim, Dongmin Kang, Tae-Yon Lee — 2009
• Characteristics of amorphous Ag0.1(Ge2Sb2Te5)0.9 thin film and its ultrafast crystallizationKi-Ho Song, Sungwon Kim, Jae-Hee Seo — 2008
• Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin filmsE. Rimini, R. De Bastiani, E. Carria — 2009

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