Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs
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- Type
- article
- Published
- 2018-06-20
- Cited by
- 23
- References
- 59
- OpenAlex
- https://openalex.org/W2809527449
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:125657705
Keywords
Condensed matter physics, Hubbard model, Variable-range hopping, Thermal conduction, Electrical resistivity and conductivity
References
- Electron Transport Phenomena in Semiconductors
- Hopping transport in solids
- Hopping Conduction in Solids
- Studies of polaron motion: Part III: The Hall mobility of the small polaron
- Resistivity and hall coefficient of antimony-doped germanium at low temperatures
- Transport properties of electrons in energy band tails
- Electronic Properties of Doped Semi-conductors
- Electrical characterization of epitaxial layers
- Conductivity of n-type GaAs near the Mott transition.
- On the sign and temperature dependence of magnetoresistance in variable-range hopping in highly compensated n-GaAs : The role of spin-effects
- Phase-shift calculation of electron mobility in n -type silicon at low temperatures
- Crossover from Mott to Efros-Shklovskii variable-range-hopping conductivity in InxOy films.
- A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga
- Negative Magnetoresistance of Neutron‐Transmutation‐Doped Gallium Arsenide at Variable‐Range Hopping
- Hopping conductivity in heavily doped strongly compensated GaAs
- A quasi-universal percolation approach of hopping activation energy and metal-nonmetal transition in semiconductors
- The Scaling Behaviour of the Metal–Insulator Transition of Isotopically Engineered Neutron‐Transmutation Doped Germanium
- Electrical properties of neutron-transmutation-doped GaAs below 450 K
- The Coulomb gap: The view of an experimenter
- Concentration and Temperature Dependence of Impurity-to-Band Activation Energies
Cited by
- Experimental investigation of the typical activation energy and distance of hopping electron transport in ZnO
- Significant Effects of the D− Band on the Hall Coefficient and the Hall Mobility of n‐InP
- Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2
- Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
- Deconvolution of temperature dependence of conductivity, its reduced activation energy, and Hall-effect data for analysing impurity conduction in n-ZnSe
- Multi-band analyses of the conductivity, the Hall coefficient, and the Seebeck coefficient of single crystal p-type β-FeSi2
- Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model
- Negative Hall Factor of Acceptor Impurity Hopping Conduction in p-Type 4H-SiC
- Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC
- Analyses of low-temperature transport and thermoelectric properties of polycrystalline undoped n-ZrNiSn
- Hopping conduction in FeSi. I. The Hall, Seebeck, and Nernst effects due to hopping conduction in the top and bottom impurity Hubbard bands
- Electrical conductivity and Hall effect in n-type CdS
- Hopping Conductivity in p-Type CuIn3Te5: A Critical Revisit
- Analyses of Electrical Transport Properties of p-Type Cu2GeSe3 Taking into Account Hopping Conduction Mechanisms
- The Dominant Effects of Hopping Conduction on the Seebeck Coefficient and the Hall Mobility in p-Type CuInTe2 and CuGaTe2
- Hopping Conduction in DX-Center-Related Impurity Bands in AlxGa1−xSb, AlxGa1−xAs, and GaAs1−xPx
- Hopping conduction in CuInSe2, CuIn3Se5, and CuGa3Te5: are there two different temperature regions in which variable-range hopping occurs?
- Analyses of Electrical Transport Data on Non-degenerate p-Type Samples of Mg2Sn and Mg2Sn0.95Si0.05 Including Hopping Conduction
- Electron Scattering and Hopping Conduction Mechanisms in n-type β-Ga2O3
- Analyses of Electrical Transport Data on Undoped n-type Mg2Si Including Significant Effects of Polar-Optical-Phonon Scattering and Hopping Conduction
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