Deconvolution of temperature dependence of conductivity, its reduced activation energy, and Hall-effect data for analysing impurity conduction in n-ZnSe
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- Type
- article
- Published
- 2020-04-23
- Cited by
- 12
- References
- 67
- OpenAlex
- https://openalex.org/W3020398706
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:219055822
Keywords
Condensed matter physics, Thermal conduction, Variable-range hopping, Impurity, Conductivity
References
- Anomalously narrow Coulomb gap
- Hopping Conduction in Solids
- Studies of polaron motion: Part III: The Hall mobility of the small polaron
- Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4
- Resistivity and hall coefficient of antimony-doped germanium at low temperatures
- Formation and properties of the impurity band in n‐ZnSe
- Critical Behaviour of n‐ZnSe Parameters in the Vicinity of the Metal—Insulator Transition
- Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe.
- High Electron Mobility in Zinc Selenide Through Low‐Temperature Annealing
- Hall Effect in the Hubbard Model: Low-Field Regime
- Critical behavior of Mott variable-range hopping in Si:As near the metal-insulator transition.
- A quasi-universal percolation approach of hopping activation energy and metal-nonmetal transition in semiconductors
- DECONVOLUTION OF ACTIVATED AND VARIABLE-RANGE-HOPPING CONDUCTION FOR BARELY INSULATING ARSENIC-DOPED SILICON
- A theoretical analysis of electron transport in ZnSe
- THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM
- The Coulomb gap: The view of an experimenter
- Hopping Conduction and Energy Spectrum of Localized States in low‐Doped Intermediate‐Compensated n‐ZnSe
- Electron‐electron interactions and the metal‐insulator transition in heavily doped silicon
- LETTER TO THE EDITOR: On the concentration dependence of the thermal ionisation energy of impurities in InP
- Conductivity and the metal-dielectric transition in compensated n-ZnSe
Cited by
- Negative Hall Factor of Acceptor Impurity Hopping Conduction in p-Type 4H-SiC
- Changes in the coercivity fields of magnetoresistance hysteresis loops under the influence of a spin-polarized current flowing through the half-metal CrO2 nanocomposite system
- Electrical conductivity and Hall effect in n-type CdS
- Hopping Conductivity in p-Type CuIn3Te5: A Critical Revisit
- Analyses of Electrical Transport Properties of p-Type Cu2GeSe3 Taking into Account Hopping Conduction Mechanisms
- The Dominant Effects of Hopping Conduction on the Seebeck Coefficient and the Hall Mobility in p-Type CuInTe2 and CuGaTe2
- Hopping conduction in CuInSe2, CuIn3Se5, and CuGa3Te5: are there two different temperature regions in which variable-range hopping occurs?
- Analyses of Electrical Transport Data on Non-degenerate p-Type Samples of Mg2Sn and Mg2Sn0.95Si0.05 Including Hopping Conduction
- Electron Scattering and Hopping Conduction Mechanisms in n-type β-Ga2O3
- Analyses of Electrical Transport Data on Undoped n-type Mg2Si Including Significant Effects of Polar-Optical-Phonon Scattering and Hopping Conduction
- Hopping conduction in n-type ZnO: a critical revisit
- Magnetic field effects on the static dielectric constant of δ-doped semiconductors: Analytical study
- Amphoteric-Dopant Model Applied to Multiband Analysis of Electrical Transport Properties of n-Type PdxCu1−xFeS2 Including an Impurity Band
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