Homoepitaxial growth of 4H-SiC (0 3 3̄ 8) and nitrogen doping by chemical vapor deposition

Keywords

Chemical vapor deposition, Doping, Nitrogen, Materials science, Impurity

References

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• Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiCTsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami — 1995
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• High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor depositionS. Nakazawa, Tsunenobu Kimoto, Kōji Hashimoto — 2002
• Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor depositionTsunenobu Kimoto, Satoshi Nakazawa, Kouichi Hashimoto — 2001
• Nitrogen doping of epitaxial silicon carbideUrban Forsberg, Örjan Danielsson, Anne Henry — 2002
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• Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle DependenceT. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami — 1997
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• Growth of SiC by Hot-Wall CVD and HTCVDOlof Kordina, C. Hallin, Anne Henry — 1997
• The Development of 4H-SiC 03-38 WafersKoji Nakayama, Youichi Miyanagi, Hiromu Shiomi — 2002
• Kinetic Theory of GasesR. D. Present, R. T. Cox — 1959
• Step-controlled epitaxial growth of SiC: High quality homoepitaxyHiroyuki Matsunami, Tsunenobu Kimoto — 1997
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Cited by

• Recent Progress of SiC Hot-Wall Epitaxy and Its ModelingShin-ichi Nishizawa, M. Pons — 2006
• Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxyMarcin Zieliński, Marc Portail, Sébastien Roy — 2009
• Increased nitrogen doping of thin lateral SiC cantileversAndrew J. Trunek, Philip G. Neudeck, Kevin Matocha — 2008
• A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC(11¯02) surfaceC. Virojanadara, M. Hetzel, Ulrich Starke — 2008
• Trends in Dopant Incorporation for 3C-SiC Films on SiliconMarcin Zieliński, Marc Portail, Hervé Peyre — 2007
• Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactorMarcin Zieliński, Marc Portail, Thierry Chassagne — 2008
• A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variationJun Gyu Kim, Yoo Youl Choi, Doo Jin Choi — 2009
• Group III nitrides grown on 4H-SiC (30 3 8) substrate by metal-organic vapor phase epitaxyAkira Honshio, Tsukasa Kitano, Masataka Imura — 2004
• Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC 03-38 Substrate and Defect AnalysisTomoaki Furusho, Hidetoshi Takagi, Satoshi Ota — 2004
• Non‐basal plane SiC surfaces: Anisotropic structures and low‐dimensional electron systemsUlrich Starke — 2009
• Investigation of dopant incorporation in silicon carbide epilayers grown by chemical vapor depositionIonela Roxana Arvinte — 2016
• Fast growth of n-type 4H-SiC bulk crystal by gas-source methodNorihiro Hoshino, Isaho Kamata, Yuichiro Tokuda — 2017
• Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVDYoshiaki Daigo, Shigeaki Ishii, Takehiko Kobayashi — 2019
• Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD ToolYoshiaki Daigo, Akio Ishiguro, Shigeaki Ishii — 2019
• Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystalsKaito Yokomoto, Masahiro Yabu, Takato Hashiguchi — 2020
• 3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectricMuhammad Idzdihar Idris, Alton B. Horsfall — 2021
• Chapter 2 3 CSiC — From Electronic to MEMS DevicesJ. Michaud, M. Portail, D. Alquier — 2018
• Epitaxial Growth and Device Processing of SiC on Non-Basal PlanesT. Kimoto, H. Yano, Y. Negoro — 2004
• 3C-SiC — From Electronic to MEMS DevicesJ. Michaud, M. Portail, D. Alquier — 2015
• Epitaxial Growth of Silicon CarbideT. Kimoto, J. Cooper — 2014

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