Boron nitride substrates for high-quality graphene electronics.

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Summary

Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).

Type
article
Published
2010-05-26
Cited by
6,570
References
44
Access
Open access

Keywords

Boron nitride, Graphene, Materials science, Electronics, Nanotechnology

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