Boron nitride substrates for high-quality graphene electronics.
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Summary
Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
- Type
- article
- Published
- 2010-05-26
- Cited by
- 6,570
- References
- 44
- Access
- Open access
- OpenAlex
- https://openalex.org/W2170539287
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:1493242
Keywords
Boron nitride, Graphene, Materials science, Electronics, Nanotechnology
References
- Electronic compressibility of gapped bilayer graphene
- Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations
- Quantum transport of massless Dirac fermions.
- Substrate-limited electron dynamics in graphene
- Ultrahigh electron mobility in suspended graphene
- Boltzmann transport and residual conductivity in bilayer graphene
- Carrier transport in two-dimensional graphene layers.
- Landau-level splitting in graphene in high magnetic fields.
- Temperature-dependent transport in suspended graphene.
- Quantum scattering time and its implications on scattering sources in graphene
- Interlayer asymmetry gap in the electronic band structure of bilayer graphene
- Measurement of scattering rate and minimum conductivity in graphene.
- Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions.
- Broken-Symmetry States and Divergent Resistance in Suspended Bilayer Graphene
- Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.
- Giant intrinsic carrier mobilities in graphene and its bilayer.
- High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides.
- Symmetry breaking in the zero-energy Landau level in bilayer graphene.
- The electronic properties of graphene
- Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.
Cited by
- Magneto-optical spectroscopy of epitaxial graphene
- Effects of adsorbates on the electronic properties of graphene
- Contribution à la théorie du transport quantique : isolants topologiques à base de graphène et phénomènes à fréquence finie
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
- Electrical and optical characterization of atomically thin WS₂.
- Raman fingerprint of aligned graphene/h-BN superlattices.
- The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper
- Ballistic-like supercurrent in suspended graphene Josephson weak links
- A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst
- Metal Oxide Induced Charge Transfer Doping and Band Alignment of Graphene Electrodes for Efficient Organic Light Emitting Diodes
- Fringe structures and tunable bandgap width of 2D boron nitride nanosheets
- Giant spin Hall effect in graphene grown by chemical vapour deposition
- Three-dimensional spirals of atomic layered MoS2.
- Fabrication of two-dimensional nanosheets via water freezing expansion exfoliation
- Van der Waals force: a dominant factor for reactivity of graphene.
- Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?
- van der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices.
- Interplay of donor-acceptor interactions in stabilizing boron nitride compounds: insights from theory.
- Hamiltonian Optics of Hyperbolic Polaritons in Nanogranules.
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