Giant spin Hall effect in graphene grown by chemical vapour deposition
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Summary
It is shown that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications, and chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect.
- Type
- article
- Published
- 2014-09-01
- Cited by
- 170
- References
- 47
- Access
- Open access
- OpenAlex
- https://openalex.org/W25175340
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:5356873
Keywords
Computer science, Artificial intelligence
References
- Spin physics in semiconductors
- Possibility of Orienting Electron Spins with Current
- Origins of nonlocality near the neutrality point in graphene.
- Extrinsic spin Hall effect induced by resonant skew scattering in graphene.
- Spin Hall Effect
- Large physisorption strain in chemical vapor deposition of graphene on copper substrates.
- Topological Insulator Materials
- Spintronics: A Spin-Based Electronics Vision for the Future
- Negative nonlocal resistance in mesoscopic gold Hall bars: absence of the giant spin Hall effect.
- Spintronics and pseudospintronics in graphene and topological insulators.
- Giant topological insulator gap in graphene with 5d adatoms.
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- Observation of long spin-relaxation times in bilayer graphene at room temperature.
- Spin polarization of the quantum spin Hall edge states
- Dependence of the Spin Coherence Length on Wire Width for Quasi‐1‐Dimensional InSb and InAs Wires and Bi Wire Surface States
- Dynamic spin injection into chemical vapor deposited graphene
- Colossal enhancement of spin–orbit coupling in weakly hydrogenated graphene
- Strong spin–orbit splitting in graphene with adsorbed Au atoms
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Toward wafer scale fabrication of graphene based spin valve devices.
Cited by
- Spin dynamics and relaxation in graphene dictated by electron-hole puddles
- Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers.
- Adatom-induced phenomena in graphene
- New perspectives for Rashba spin-orbit coupling.
- Introduction to Graphene-Based Nanomaterials: From Electronic Structure to Quantum Transport
- Quantum transport of Dirac fermions in graphene with a spatially varying Rashba spin-orbit coupling
- Dynamical spin injection at a quasi-one-dimensional ferromagnet-graphene interface
- Multiple quantum phases in graphene with enhanced spin-orbit coupling: from the quantum spin Hall regime to the spin Hall effect and a robust metallic state.
- Enhanced spin–orbit coupling in dilute fluorinated graphene
- Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions
- Symmetries of quantum transport with Rashba spin-orbit: graphene spintronics.
- Graphene spintronics: the European Flagship perspective
- Tunneling Experiments with Dirac Electrons in Graphene Heterojunctions
- Proximity Effect Induced Electronic Properties of Graphene on Bi₂Te₂Se.
- Charge and spin transport in graphene devices
- In situ cleavage prepared bilayer graphene device and its large magnetoresistance
- Kubo–Bastin approach for the spin Hall conductivity of decorated graphene
- Strong interfacial exchange field in the graphene/EuS heterostructure.
- Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene.
- Sizeable Kane–Mele-like spin orbit coupling in graphene decorated with iridium clusters
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