Ab initio study on the dimer structures of trimethylaluminum and dimethylaluminumhydride
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- Type
- article
- Published
- 1994-12-02
- Cited by
- 21
- References
- 13
- OpenAlex
- https://openalex.org/W2095007762
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:97968009
Keywords
Dimer, Chemistry, Ab initio, Dissociation (chemistry), Ab initio quantum chemistry methods
References
- Atomic Layer Epitaxy of AlAs and (AlAs)n(GaAs)n Superlattices Using Dimethylaluminumhydride as the Al Source
- Approximate fourth-order perturbation theory of the electron correlation energy
- Surface reaction mechanisms in GaAs atomic layer epitaxy
- Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
- Contribution of triple substitutions to the electron correlation energy in fourth order perturbation theory
- Electron correlation theories and their application to the study of simple reaction potential surfaces
- A Gas Phase Electron Diffraction Investigation of the Molecular Structures of Trimethylaluminium Monomer and Dimer.
- Electron Deficient Compounds. VII. The Structure of the Trimethylaluminum Dimer
- AB INITIO Molecular Orbital Theory
- Ab initio molecular orbital study on the reaction of TMA with H2
- Infrared matrix isolation spectroscopy of trimethylgallium, trimethylaluminium and triethylaluminium
- A gas-phase Raman study of trimethylaluminium and trimethylboron monomers
- Crystal structure of trimethylaluminum
Cited by
- Trimethylaluminium: Bindungsverhältnisse nach Ladungs‐ und Stromtopologie
- Ab initio study of aluminum chemical vapor deposition from dimethylaluminum hydride: a gas phase reaction mechanism
- New molecular compound precursor for aluminum chemical vapor deposition
- Ab initio molecular orbital study on the As-stabilized GaAs(001)-(2 × 4)β1 surface
- Adsorption and thermal decomposition of diethylaluminum hydride on Si(1 0 0)-2 × 1
- Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN
- Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy
- Trimethylaluminum: Bonding by Charge and Current Topology.
- Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy
- Vapor phase infiltration (VPI) for transforming polymers into organic–inorganic hybrid materials: a critical review of current progress and future challenges
- Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy
- Sequential Infiltration Synthesis of Electronic Materials: Group 13 Oxides via Metal Alkyl Precursors
- The mechanism of the reaction between MAO and TMA: DFT study of the electronic structure and characterization of transition states for [AlOMe]6, [AlOMe]9 and [AlOMe]16 cages.
- Vapor-Phase Infiltration inside a Microporous Porphyrinic Metal-Organic Framework for Postsynthesis Modification.
- Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE
- Role of Precursor Choice on Area-Selective Atomic Layer Deposition
- Investigation of abnormally high growth-per-cycle in atomic layer deposition of Al2O3 using trimethylaluminum and water
- A Theoretical Study on the Mechanism and Kinetics of the Dimeric TrimethylAluminum + O2 Reaction in the Gas Phase: A Potential Chain-initiation in the Hypergolic Combustion of TMA in Air
- Accurately Computed Dimerization Trends of ALD Precursors and Their Impact on Surface Reactivity in Area-Selective Atomic Layer Deposition
- Accurately computed dimerization fraction of ALD precursors and their impact on surface reactivity in area-selective atomic layer deposition
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