Electronics based on two-dimensional materials.
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Summary
A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
- Type
- article
- Published
- 2014-10-01
- Cited by
- 2,877
- References
- 210
- OpenAlex
- https://openalex.org/W2086880071
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:205451315
Keywords
Electronics, Semiconductor industry, Electronic materials, Nanotechnology, Power consumption
References
- Sorting carbon nanotubes by electronic structure using density differentiation
- The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper
- High Spectral Density Optical Communication Technologies
- Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
- Integrated circuits based on bilayer MoS₂ transistors.
- An advanced lithium-ion battery based on a graphene anode and a lithium iron phosphate cathode.
- Interband Tunneling in 2D Crystal Semiconductors
- MoS_2 Field-Effect Transistors With Graphene/Metal Heterocontacts
- Remote plasma assisted growth of graphene films: structure and physical properties
- Large Area Single Crystal (0001) Oriented MoS2 Thin Films
- Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade ) at Room Temperature
- Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- Carbon nanotube thin film transistors based on aerosol methods
- High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
- DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching.
- Graphene Solution‐Gated Field‐Effect Transistor Array for Sensing Applications
- Optical studies of metal-semiconductor transmutations produced by intercalation
- Record maximum oscillation frequency in C-face epitaxial graphene transistors.
- Photon-Assisted CVD Growth of Graphene Using Metal Adatoms As Catalysts
Cited by
- Vacancy and Doping States in Monolayer and bulk Black Phosphorus
- Role of Charge Traps in the Performance of Atomically Thin Transistors
- Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs).
- Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors
- Real-Time Observing Ultrafast Carrier and Phonon Dynamics in Colloidal Tin Chalcogenide van der Waals Nanosheets.
- Toward barrier free contact to molybdenum disulfide using graphene electrodes.
- Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride.
- Temperature dependent separation of metallic and semiconducting carbon nanotubes using gel agarose chromatography
- Two-dimensional materials for low power and high frequency devices
- Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy
- Computational prediction and rational design of novel clusters, nanoparticles, and solid state materials
- Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide
- Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
- System-level applications of two-dimensional materials: Challenges and opportunities
- Charge-transport properties of monolayer MoS2 at the interface with dielectric materials
- Charge Relaxation Resistances in Gated Graphene Nanoribbons
- Magnetic field argon ion filtering for pulsed magnetron sputtering growth of two-dimensional MoS2
- Can inorganic salts tune electronic properties of graphene quantum dots?
- Linearly polarized remote-edge luminescence in GaSe nanoslabs
- Effective Doping of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications
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