Vacancy and Doping States in Monolayer and bulk Black Phosphorus
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Summary
The vacancy is found to reconstruct in monolayer P to leave a single dangling bond, giving a negative U defect with a +/− transition level above the valence band edge, and the V− state forms an unusual 4-fold coordinated site in few-layer and bulk black P.
- Type
- article
- Published
- 2015-09-18
- Cited by
- 67
- References
- 55
- Access
- Open access
- OpenAlex
- https://openalex.org/W26383634
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:18488264
Keywords
Biology, Foraging, Pollinator, Ecology, Zoology
References
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- High‐Quality Black Phosphorus Atomic Layers by Liquid‐Phase Exfoliation
- Mobility of Charge Carriers in Semiconducting Layer Structures
- Effect of pressure on bonding in black phosphorus
- Structural defects in graphene.
- Semiconducting black phosphorus
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Microscopic origin of the phenomenological equilibrium "Doping limit Rule" in n-type III-V semiconductors
- Screened exchange density functional applied to solids
- Band offsets of wide-band-gap oxides and implications for future electronic devices
- Single-layer MoS2 transistors.
- Azobenzene at coinage metal surfaces: Role of dispersive van der Waals interactions
- Negative poisson’s ratio in single-layer black phosphorus
Cited by
- Nonradiative Electron--Hole Recombination Rate Is Greatly Reduced by Defects in Monolayer Black Phosphorus: Ab Initio Time Domain Study.
- Mott lecture: How bonding concepts can help understand amorphous semiconductor behavior
- Theoretical impurity-limited carrier mobility of monolayer black phosphorus
- Atomic structures and electronic properties of phosphorene grain boundaries
- Highly Itinerant Atomic Vacancies in Phosphorene.
- Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.
- Recent Advances in the Study of Phosphorene and its Nanostructures
- The role of H2O and O2 molecules and phosphorus vacancies in the structure instability of phosphorene
- First-principles study of the defected phosphorene under tensile strain
- Electron Spin Dynamics of Two‐Dimensional Layered Materials
- Nonlinear optical responses of protected atomically thin black phosphorus
- Prospects of spintronics based on 2D materials
- Band offsets and metal contacts in monolayer black phosphorus
- Quantum confinement in black phosphorus-based nanostructures
- Periodic Arrays of Phosphorene Nanopores as Antidot Lattices with Tunable Properties
- Gate-Tunable Electronic Structure of Black Phosphorus/HfS2 P–N van der Waals Heterostructure with Uniformly Anisotropic Band Dispersion
- Recent progress in 2D group-VA semiconductors: from theory to experiment.
- Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2
- Direct transition of a HfGeTe4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap
- Two-dimensional black phosphorus: its fabrication, functionalization and applications.
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