Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors (Invited Paper)
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- Type
- article
- Published
- 2009-07-01
- Cited by
- 24
- References
- 17
- OpenAlex
- https://openalex.org/W2080341157
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:137155957
Keywords
Atomic layer deposition, Oxide, Annealing (glass), Materials science, Forming gas
References
- The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles
- Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2
- Advanced Gate Stacks for High-Mobility Semiconductors
- Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
- Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
- Dangling-bond defects and hydrogen passivation in germanium
- Experiments in MIS structure based on germanium and improvements of the interfacial properties
- Unified defect model and beyond
- Gate dielectric formation and MIS interface characterization on Ge
- Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
- Mechanism of germanium plasma nitridation
- Dominant Surface Electronic Properties of SiO2‐Passivated Ge Surfaces as a Function of Various Annealing Treatments
- In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition
- Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
- Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
- Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density
- Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)
Cited by
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
- Energy Distribution of Positive Charges in Al_2 O_3 GeO_2/ Ge pMOSFETs
- Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO_2/SiO_2 Gate Stack
- Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2).
- Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation
- Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation
- Structural damage of Si-implanted in the In0.53Ga0.47As thin film
- integrations and challenges of novel high-k gate stacks in advanced cmos technology
- Interfacial chemistry of hydrofluoric acid-treated In0.53Ga0.47As(100) during atomic layer deposition of aluminum oxide
- Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
- Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
- Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors
- High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- In situ encapsulation of germanium clusters in carbon nanofibers: high-performance anodes for lithium-ion batteries.
- Confined germanium nanoparticles in an N-doped carbon matrix for high-rate and ultralong-life lithium ion batteries
- Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO_2/ Al_2 O_3 Stack
- Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs
- Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer
- Numerical analysis and performance improvement of nanostructured Cu2O/TiO2pn heterojunction solar cells using SCAPS
- Contribution of microchannel plate luminescence to the noise of 20-inch photomultiplier tubes
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