Experiments in MIS structure based on germanium and improvements of the interfacial properties

Keywords

Germanium, Materials science, Annealing (glass), Germanium oxide, Oxide

References

• Chemical Etching of Germanium with H3PO4–H2O2–H2O SolutionS. Kagawa, Takashi Mikawa, T. Kaneda — 1982
• Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor DepositionAndrew B. Young, James J. Rosenberg, István Szendrő — 1987
• Preparation and ESCA analysis of the germanium surface: electrical characterization of the Al2O3Ge and Al2O3:GeO2Ge structuresZ. Benamara, B. Gruzza — 1994
• Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed DiodesKatsumi Murase, Yoshihito Amemiya, Yoshihiko Mizushima — 1982
• Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS TransistorsShigeki Iwauchi, Toshio Tanaka — 1971
• Preparation and characterization of germanium substrates for MIS electronic devicesZ. Benamara, B. Gruzza — 1995
• Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductorG. D. Bagratishvili, R. B. Dzhanelidze, David Jishiashvili — 1983

Cited by

• Low‐cost high‐quality crystalline germanium based flexible devicesJoanna M. Nassar, Aftab M. Hussain, Jhonathan P. Rojas — 2014
• Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon SubstrateJaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet — 2007
• Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors (Invited Paper)Paul C. McIntyre, Yasuhiro Oshima, Eunji Kim — 2009
• Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitorsA. Dimoulas, G. Vellianitis, G. Mavrou — 2005
• Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitorsA. Dimoulas, G. Vellianitis, G. Mavrou — 2005
• Characteristics of deposited Eu2O3 film as a thick gate dielectric for siliconA.A. Dakhel — 2004
• Rapid thermal oxidation of Ge-rich strained layersSoumen Das, Sudipto Chakraborty, Sanjib Bhattacharya — 2004
• Ge MOS characteristics with CVD HfO/sub 2/ gate dielectrics and TaN gate electrodeWeiping Bai, N. Lu, J. Liu — 2003
• Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance TransistorsRobert M. Wallace, Paul C. McIntyre, Jiyoung Kim — 2009
• A study on gate-stack process for Ge MOS devices with La2O3 gate dielectric在烈 宋 — 2010
• Transfer-less flexible and transparent high-к/metal gate Germanium devices on bulk silicon (100)Joanna M. Nassar, Aftab M. Hussain, Jhonathan P. Rojas — 2014
• Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAsS. Spiga, C. Wiemer, G. Scarel — 2007

Related papers

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• Preparation of germanium oxide and metal germaniumFeng Jin-wen — 2002
• The Germanium‐Oxygen SystemM. Hoch, Herrick L. Johnston — 1954
• Optical charging of real surface of germanium over a wide range of temperaturesП. К. Кашкаров, С. Н. Козлов — 1979
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• The Reaction of Germanium with Nitric Acid Solutions1958