Adsorption of tin on the Ge(111)-c(2 × 8) surface studied with scanning tunneling microscopy and photoelectron spectroscopy

Keywords

Overlayer, Scanning tunneling microscope, Monolayer, X-ray photoelectron spectroscopy, Amorphous solid

References

• Semiconductors and electronic devicesA. Bar‐Lev — 1979
• Adatom and rest-atom contributions in Ge(111)c(2 x 8) and Ge(111)-Sn(7 x 7) core-level spectra.M. Göthelid, T.M. Grehk, Mattias Hammar — 1993
• Structural study of Sn-induced superstructures on Ge(111) surfaces by RHEEDToshihiro Ichikawa, Shozo Ino — 1981
• Semiconductor surface structuresA. Kahn — 1983
• Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bondingF. J. Himpsel, D. E. East̀man, P. Heimann — 1981
• X-ray diffraction study of the Ge(111)5 x 5-Sn and Ge(111)7 x 7-Sn surfaces.Jan Skov Pedersen, R. Feidenhans’l, Mourits Nielsen — 1988
• Photoemission spectroscopy at MAX‐LabJ. N. Andersen, Olle Björneholm, A. Sandell — 1991
• Core-level study of the phase transition on the Ge(111)-c(2 x 8) surface.J. Aarts, A. J. Hoeven, P.K. Larsen — 1988
• Structural study of ultrathin Sn layers deposited onto Ge(111) and Si(111) surfaces by RHEEDToshihiro Ichikawa — 1984
• Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopyK. Takayanagi, Y. Tanishiro, Masaetsu Takahashi — 1985
• Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 sqrt 3 x 2 sqrt 3 )R30 degrees reconstructed surface.Christer Törnevik, Mattias Hammar, N.G. Nilsson — 1991
• Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfacesH.-J. Gossmann, L. C. Feldman — 1986
• Structure of Sn/Ge(111) from low-energy electron-diffraction and photoemission studies.S. B. DiCenzo, P. A. Bennett, David Tribula — 1985
• Structural anomaly of liquid Sn layers adsorbed on Ge(1 1 1) surfacesT. Ichikawa — 1987
• Initial stages of interface formation in group IV-IV systems: Sn ON Ge(100) and Ge(111)H.‐J. Gossmann — 1987
• Adsorption of Sn onSi(111)7 × 7: reconstructions in the monolayer regimeChrister Törnevik, M. Göthelid, Mattias Hammar — 1994

Cited by

• Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopantsM. E. Dávila, J. Ávila, Marı ́a Carmen Asensio — 2006
• Surface Reconstruction of (123) and (111) Ge(Sn) Solid Solutions Induced by Tin SegregationA. Rolland, A. Rouabah, F. Cabané — 1998
• Electron correlation and many‐body effects at interfaces on semiconducting substratesAntonio Tejeda, Y. Fagot‐Révurat, R. Cortés — 2012
• Metal-semiconductor fluctuations on reconstructed SnSi(111) surfacesH.T. Anyele, Charles L. Griffiths, A.A. Cafolla — 1998
• Charge rearrangement in the GexPb1−x/Ge(111) interfaceJoseph M. Carpinelli, Hanno H. Weitering, E. W. Plummer — 1998
• Surface phase transitions at metal–semiconductor interfaces: a revisit is neededM. E. Dávila, J. Ávila, H. Ascolani — 2004
• An STM study of the surface defects of the ( 3 3 ) -Sn/Si(1 1 1) surfaceS. T. Jemander, Nian Lin, H.M. Zhang — 2001
• Adsorption of Sn on the Ge(111)‐(3 × 3) surface studied by ab initio density functional theorySibel Özkaya, M. Çakmak, B. Alkan — 2011
• Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardmentA. Rolland, J. Bernardini, G. Moya — 2004
• Dynamical fluctuation and surface phase transition at the Sn/Ge(111) √3×√3R30°-α interfaceJ. Ávila, Yves Huttel, G. Le Lay — 2000
• Surface charge density waves at Sn/Ge(111)?G. Le Lay, V. Yu. Aristov, Oskar Boström — 1998
• Defect-blurred two-dimensional phase transitionLone Kjeld Petersen, Ismail Ismail, E. W. Plummer — 2002
• Interface states at semiconductor junctionsG. Margaritondo — 1999
• The Fermi surface of Sn/Ge(111) and Pb/Ge(111)Antonio Tejeda, R. Cortés, J Lobo — 2007
• Low Temperature Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy Study at the α-Sn/Ge(111) SurfaceF. Ronci, Stefano Colonna, Stephen D. Thorpe — 2006
• Electronic instabilities of the two-dimensional Sn/Ge(111) α-phaseJ. Ávila, Yves Huttel, A. Mascaraque — 1999
• Many-body effects in the electronic structure of Sn/Si(111)-α-(3)1/2Anne Charrier, Rúben Pérez, F. Thibaudau — 2001
• Influence of charged impurities on the surface phases of Sn/Ge(1 1 1)M Goshtasbi Rad, M. Göthelid, G. Le Lay — 2001
• Nature of the √3α to 3 × 3 reversible phase transition at low temperature in Sn/Ge (111)G. Le Lay, M Goshtasbi Rad, M. Göthelid — 2001
• Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces: Clean and Modified by H or Sn AtomsIvy Razado-Colambo — 2009

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