Role and mechanism of the formation of hydrogen-induced interface states for platinum/silicon oxide/silicon MOS tunnelling diodes

Keywords

Silicon, Quantum tunnelling, Diode, Materials science, Platinum

References

• Hydrogen evolution at a Pt-modified InP photoelectrode : improvement of current-voltage characteristics by HCl etchingHikaru Kobayashi, Fumiaki Mizuno, Yoshihiro Nakato — 1991
• Transition metal-gate MOS gaseous detectorsT.L. Poteat, B. Lalevic — 1982
• Theory of tunneling into interface statesLeo B. Freeman, Walter E. Dahlke — 1970
• Mechanism of hydrogen sensing by platinum/silicon oxide/silicon MIS tunneling diodesHikaru Kobayashi, Yasutaka Kogetsu, Yoshihiro Nakato — 1994
• Hydrogen-sensitive Schottky barrier diodesKentaro Ito — 1979
• Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctionsHikaru Kobayashi, Takao Ishida, Yoshihiro Nakato — 1991
• Pd–thin‐SiO2–Si diode. I. Isothermal variation of H2‐induced interfacial trapping statesBahman Keramati, J.N. Zemel — 1982
• Hydrogen-induced DLTS signal in pd/n-Si Schottky diodesM.C. Petty — 1982
• Pd–thin‐SiO2–Si diode. II. Theoretical modeling and the H2 responseBahman Keramati, J.N. Zemel — 1982
• Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsChih‐Tang Sah, Robert N. Noyce, W. Shockley — 1957
• PdSi Schottky diodes as hydrogen sensing devices: Capacitance-voltage characteristicsA. Diligenti, Moreno Stagi, V. Ciuti — 1983
• The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance techniqueE. H. Nicollian, A. Goetzberger — 1967

Cited by

• Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon dioxideD. K. Dwivedi, R. Dwivedi, S.K. Srivastava — 2000
• Hydrogen-sensitive I–V characteristics of metal–ferroelectric gas sensor device fabricated by sol–gel techniqueOoi Kiang Tan, Weiguang Zhu, M.S. Tse — 1999
• The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (pd-mosc) : A conductance studyD. K. Dwivedi, R. Dwivedi, S.K. Srivastava — 1998

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