The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (pd-mosc) : A conductance study

Keywords

Materials science, Conductance, Hydrogen, Silicon, Palladium

References

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• The effect of hydrogen and carbon monoxide on the interface state density in MOS gas sensors with ultra-thin palladium gatesMark A. Formoso, G. Jordan Maclay — 1990
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• Submonolayer-Pt on TiO2 (110) Surfaces: Electronic and Geometric EffectsStefan Fischer, Klaus‐Dieter Schierbaum, Wolfgang Göpel — 1996
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• Hydrogen‐induced oxide surface charging in palladium‐gate metal‐oxide‐semiconductor devicesM. Armgarth, C. Nylander, C. Svensson — 1984
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• Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitorsPınar Özdağ — 2005
• Online monitoring of transformers using gas sensor fabricated by nanotechnologyAnjali Chatterjee, Rajat Sarkar, Nirmal Kumar Roy — 2013
• The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodesHabibe Uslu, Ş. Altındal, Umut Aydemir — 2010
• Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrierİ.M. Afandiyeva, M.M. Bülbül, Ş. Altındal — 2012
• Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon dioxideD. K. Dwivedi, R. Dwivedi, S.K. Srivastava — 2000
• New gas sensitive MIS structures Pt/Al2O3(M = Pt, Rh)/Si with a granular dielectric layerAndrey Ryzhikov, F. Robaut, M. Labeau — 2008
• Sensor response time evaluations of trace hydrogen gaseous species with platinum using Kelvin ProbeG. Eranna, R. Paris, Theodor Doll — 2012
• The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurementsİ.M. Afandiyeva, Ïlbilge Dökme, Ş. Altındal — 2008
• Usage of nanotechnology based gas sensor for health assessment and maintenance of transformers by DGA methodAnjali Chatterjee, Partha S. Bhattacharjee, Nirmal Kumar Roy — 2013
• Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrierİ.M. Afandiyeva, S. Demirezen, Ş. Altındal — 2013
• Investigation of Pd/TiO2/Si MIS capacitor as hydrogen sensorKumar Shubham, Rehan Khan, P. Chakrabarti — 2015
• The Impact of TiO_2 Interface Layer on a Pd/n-LTPS Schottky Diode Hydrogen Detecting PerformancesYen-Ting Chiang, Yean-Kuen Fang, Tse-Heng Chou — 2010
• TiO2 thin film-based low concentration MIS hydrogen sensorKumar Shubham, Rehan Khan, P. Chakrabarti — 2012
• Room temperature high hydrogen gas response in Pd/TiO 2 /Si/Al capacitive sensorSmrity Ratan, Chandan Kumar, Amit Kumar — 2020
• ILLUMINATION DEPENDENT ELECTRICAL CHARACTERISTICS OF PTSI / NSI ( 111 ) SCHOTTKY BARRIER DIODES ( SBDS ) AT ROOM TEMPERATUREI. Afandiyeva, Ş. Altındal, L. K. Abdullayeva — 2017

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