High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
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Summary
The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.
- Type
- article
- Published
- 2015-04-30
- Cited by
- 1,787
- References
- 33
- OpenAlex
- https://openalex.org/W2040943220
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:205243572
Keywords
Materials science, Monolayer, Optoelectronics, Nanotechnology, Electron mobility
References
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- Electrical transport properties of polycrystalline monolayer molybdenum disulfide.
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- Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Probing excitonic dark states in single-layer tungsten disulphide
- Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
- Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.
- Identification of individual and few layers of WS2 using Raman Spectroscopy
- From Bulk to Monolayer MoS2: Evolution of Raman Scattering
- The valley Hall effect in MoS2 transistors
- Mobility engineering and a metal-insulator transition in monolayer MoS₂.
- Theoretical Study of the MoS2 (100) Surface: A Chemical Potential Analysis of Sulfur and Hydrogen Coverage
- Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors
- Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization.
- HYDROGENOLYSIS OF OXYGENATED ORGANIC COMPOUNDS
- Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (Adv. Mater. 17/2014)
Cited by
- Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
- Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth.
- In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films
- Broadband MoS2-based absorber investigated by a generalized interference theory.
- Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode.
- Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties.
- Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals
- Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents.
- Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.
- Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.
- Eco-friendly synthesis of metal dichalcogenides nanosheets and their environmental remediation potential driven by visible light
- Thermal management in MoS2 based integrated device using near-field radiation
- Tuning the electronic properties of transition-metal trichalcogenides via tensile strain.
- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
- Synthesis and Application of Monolayer Semiconductors (June 2015)
- Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications.
- Control of Light-Matter Interaction in 2D Atomic Crystals Using Microcavities
- Emerging energy applications of two-dimensional layered transition metal dichalcogenides
- High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.
- Materials science: Semiconductors grown large and thin
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