Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys
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Summary
Atomically thin, 2D semiconductor alloys with tunable bandgaps with potential applications in nano- and opto-electronics are successfully grown over large areas with high on/off ratios.
- Type
- article
- Published
- 2014-05-01
- Cited by
- 384
- References
- 35
- OpenAlex
- https://openalex.org/W2011615548
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:205254278
Keywords
Materials science, Semiconductor, Semiconductor materials, Engineering physics, Condensed matter physics
References
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- Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.
- How good can monolayer MoS₂ transistors be?
- Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.
- Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition.
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- Valley polarization in MoS2 monolayers by optical pumping.
- Roll-to-roll production of 30-inch graphene films for transparent electrodes.
Cited by
- Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family
- Etching-free transfer of wafer-scale MoS2 films
- Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride.
- MoS2(1−x)Se2x Nanobelts for Enhanced Hydrogen Evolution
- Synthesis and Enhanced Electrochemical Catalytic Performance of Monolayer WS2(1–x)Se2x with a Tunable Band Gap
- Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
- Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications.
- Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects
- Combinatorial insights into doping control and transport properties of zinc tin nitride
- Large-area synthesis of monolayered MoS(2(1-x))Se(2x) with a tunable band gap and its enhanced electrochemical catalytic activity.
- Spin-orbit engineering in transition metal dichalcogenide alloy monolayers
- Piezoreflectance study of near band edge excitonic-transitions of mixed-layered crystal Mo(SxSe1-x)2 solid solutions
- Composition dependent lattice dynamics in MoSxSe(2–x) alloys
- Dendritic, transferable, strictly monolayer MoS2 flakes synthesized on SrTiO3 single crystals for efficient electrocatalytic applications.
- Two-dimensional transition metal dichalcogenide nanosheet-based composites.
- Phase engineering of transition metal dichalcogenides.
- High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
- Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers
- Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques.
- Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.
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