The electrical characterisation of semiconductors

Keywords

Physics, Semiconductor, Semiconductor materials, Engineering physics, Silicon

References

• The Scattering Factor in n-Type InPC. Hilsum, H.D. Rees, W. Wilgoss — 1973
• Lattice defects in semiconductorsRyukichi Hashiguchi — 1968
• Measuring the lifetime of minority carriers in MIS structuresP. Tománek — 1969
• Spectral Distribution of PhotoconductivityHenry B. DeVore — 1956
• Capacitance‐Voltage Measurements with a Mercury‐Silicon DiodeP. J. Severin, G. J. M. Poodt — 1972
• EFFICIENT PHOTOEMISSION FROM Ge‐DOPED GaAs GROWN BY LIQUID‐PHASE EPITAXYH. Schade, H. Nelson, H. Kressel — 1971
• Use of Schottky‐diode collectors for SEM determination of bulk diffusion lengthsC. van Opdorp, Richard Peters, M.V.D.S. de Klerk — 1974
• High temperature hall measurements on GaAsF. Roberts — 1965
• Temperature dependence of inversion–layer frequency response in siliconA. Goetzberger, E. H. Nicollian — 1967
• Energy levels and concentrations for platinum in siliconK. P. Lisiak, A. G. Milnes — 1975
• Minority carrier recombination in MOS capacitors switched from inversion to accumulationP.U. Calzolari, S. Graffi, C. Morandi — 1977
• Measurement of deep-level spatial distributionsS. D. Brotherton — 1976
• Resistivity Inhomogeneities in Silicon CrystalsR. G. Mazur — 1967
• Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'SE. Fabre, R. N. Bhargava — 1974
• A Photon Counting Apparatus for Kinetic and Spectral MeasurementsR. Z. Bachrach — 1972
• Electrical characterization of epitaxial layersG. E. Stillman, C. M. Wolfe — 1976
• Solution of the Field Problem of the Germanium GyratorR. F. Wick — 1954
• Measurement of Diffusion Lengths in p‐Type Gallium Arsenide by Electron Beam ExcitationT. S. Rao-Sahib, D. B. Wittry — 1969
• Determination of galvanomagnetic coefficients by a one-point methodL. Gútai — 1973
• Contactless resistivity meter for semiconductorsJ.C. Brice, P. Moore — 1961

Cited by

• The Influence of Laterally Inhomogeneous Contacts on the Impedance of Solid Materials: A Three-Dimensional Finite-Element StudyJürgen Fleig, Joachim Maier — 1997
• Electrical characterisation of particle irradiated 4H-SiCAlexander T. Paradzah — 2014
• Molecular Beam Epitaxy of Iii-V CompoundsK. H. Ploog, Klaus Graf — 1984
• Defect states in the GIGS solar cells by photocapacitance and deep level optical spectroscopyM. Igalson, A. Urbaniak — 2005
• Defect characterization of Europium implanted Gallium NitrideMiguel Matias Serrão, W. Somerset Maugham, Guido Lan — 2008
• Displacement damage induced by cosmic rays in silicon devices using geant4 toolkit for space applicationsC. Consolandi — 2010
• The characterization of bulk as-grown and annealed ZnO by the Hall effectGünther Kassier — 2007
• Investigation of sub-bandgap absorption in iron pyrite : optical and electrical measurementsRupak Chakraborty — 2014
• Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)M. Gonschorek, J.‐F. Carlin, E. Feltin — 2008
• Improving the resolution of lock-in measurements by tailoring the modulationAngelo Peronio, Carlo Dri, Giovanni Comelli — 2013
• Anomalous behaviour of galvanomagnetic effects in very lightly n-type bulk GaAs : Possible role of reverse-contrast centresS. Tüzemen, Bekir Gürbulak, Muhammet Yıldırım — 1999
• Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ionsA. Krtschil, A. Kielburg, H. De Witte — 2002
• Point contacts in solid state ionics: finite element calculations and local conductivity measurementsJürgen Fleig — 1996
• Automated Hall effect profiler for electrical characterisation of semiconductorsN. D. Young, M.J. Hight — 1985
• Sheet resistance determination of electrically symmetric planar four-terminal devices with extended contactsMartin Cornils, Oliver Paul — 2008
• Identification of the double acceptor levels of the mercury vacancies in HgCdTeF. Gemain, I. C. Robin, M. De Vita — 2011
• Correlation of the charge collection efficiency of GaAs particle detectors with material propertiesKevin Berwick, M.R. Brozel, C. M. Buttar — 1996
• A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensorsI. Gorelov, G. Gorfine, M. R. Hoeferkamp — 2002
• Determination of electric transport properties in the pre- and post-breakdown regime ofp-germaniumJürgen Parisi, Uwe Rau, Joachim Peinke — 1988
• Low temperature measurements of electrical activity and Hall mobility of boron implanted siliconA. El‐Sadek — 1985

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