Terahertz semiconductor-heterostructure laser

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Summary

A monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure is reported, which is very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Type
article
Published
2002-05-09
Cited by
2,559
References
55

Keywords

Terahertz radiation, Laser, Optoelectronics, Semiconductor, Photomixing

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