Stimulated emission from donor transitions in silicon

Keywords

Silicon, Lasing threshold, Materials science, Atomic physics, Radiation

References

• Esaki-Tsu superlattice oscillator: Josephson-like dynamics of carriers.А. А. Игнатов, K. F. Renk, E. P. Dodin — 1993
• Phonons: Theory and Experiments IIIP. Brüesch — 1982

Cited by

• The physics of optically pumped semiconductor bulk lasers for the 5-15 THz frequency rangeS. G. Pavlov, Heinz‐Wilhelm Hübers, Mark H. Rümmeli — 2001
• Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor StructuresM. V. Dolguikh — 2005
• Magneto-Spectroscopy and Development of Terahertz Quantum Cascade LasersGiacomo Scalari — 2005
• Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumpingJ. N. Hovenier, T.O. Klaassen, R. Kh. Zhukavin — 2002
• Spin relaxation via exchange with donor impurity-bound electronsLan Qing, Jing Li, Ian Appelbaum — 2013
• Advances in Solid State PhysicsR. J. Haug — 2008
• The emission spectra of optically pumped Si-based THz lasersT.O. Klaassen, J. N. Hovenier, R. Kh. Zhukavin — 2002
• Terahertz electroluminescence under conditions of shallow acceptor breakdown in germaniumA. V. Andrianov, A. O. Zakhar’in, I. N. Yassievich — 2004
• Possibility of THz donor lasing in electrically pumped siliconR. Kh. Zhukavin, V. V. Tsyplenkov, Valery N. Shastin — 2013
• The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centersE. E. Orlova, P. Harrison, W. -M. Zhang — 2005
• Terahertz silicon lasersS. G. Pavlov, Heinz‐Wilhelm Hübers, Ute Böttger — 2006
• Terahertz Raman laser from silicon doped by arsenicHeinz‐Wilhelm Hübers, S. G. Pavlov, Ute Böttger — 2009
• Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed siliconK. A. Kovalevsky, N. V. Abrosimov, R. Kh. Zhukavin — 2015
• Stimulated terahertz emission due to electronic Raman scattering in siliconS. G. Pavlov, Ute Böttger, J. N. Hovenier — 2009
• Frequency tunability of the terahertz silicon laser by a magnetic fieldS. G. Pavlov, H.-W. Hübers, M.F. Kimmitt — 2006
• Heterodyne receiver for 3-5 THz with hot-electron bolometer mixerHeinz‐Wilhelm Hübers, A. D. Semenov, Heiko Richter — 2004
• TOPICAL REVIEW: Will silicon be the photonic material of the third millenium? *Lorenzo Pavesi — 2003
• Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructureR. Kh. Zhukavin, N. A. Bekin, Д. Н. Лобанов — 2014
• Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitationV. N. Shastin, R. Kh. Zhukavin, E. E. Orlova — 2002
• Terahertz Raman laser based on silicon doped by phosphorusHeinz‐Wilhelm Hübers, S. G. Pavlov, Ute Böttger — 2008

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