The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers

E. E. Orlova, P. Harrison, W. -M. Zhang, M. P. Halsall · Semiconductors · 2005

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Type: article
Published: 2005-01-01
Cited by: 1
References: 10
DOI: https://doi.org/10.1134/1.1852646
OpenAlex: https://openalex.org/W1967188538
Semantic Scholar: https://api.semanticscholar.org/CorpusID:120708784

Keywords

Wave function, Impurity, Excited state, Wave vector, Condensed matter physics

References

Nonradiative Recombination in SemiconductorsV. N. Abakumov, V. I. Perel’, I. Yassievich — 1991
RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICONG. Ascarelli, S.C. Brown — 1964
Picosecond far-infrared studies of intra-acceptor dynamics in bulk GaAs and δ-doped AlAs/GaAs quantum wellsMatthew P. Halsall, P. Harrison, J.‐P. R. Wells — 2001
Stimulated emission from donor transitions in siliconС.Г. Павлов, R. Kh. Zhukavin, E. E. Orlova — 2000
Acceptor spectra of AlxGa1-xAs-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress.W. T. Masselink, Yia‐Chung Chang, H. Morkoç̌ — 1985
Activation Energy of Holes in Zn‐Doped GaAsD. E. Hill — 1970
Effects of confinement on shallow donors and acceptors in GaAs/AlGaAs quantum wellsA.A. Reeder, J.-M. Mercy, B. D. McCombe — 1988
Picosecond time‐resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wellsWenwen Zheng, Matthew P. Halsall, P. Harrison — 2003
Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wellsWenwen Zheng, Matthew P. Halsall, P. Harmer — 2002

Cited by

Energy characteristics of boron impurity in Si∕Si1−xGex heterostructures with on-center and on-edge selective doping of quantum wellsV. V. Vaǐnberg, Yu. N. Gudenko, V. N. Poroshin — 2007

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