Electrical properties and colossal electroresistance of heteroepitaxial Sr Ru O 3 ∕ Sr Ti 1 − x Nb x O 3 ( 0.0002 ⩽ x ⩽ 0.02 ) Schottky junctions

Keywords

Condensed matter physics, Hysteresis, Materials science, Schottky barrier, Schottky diode

References

• Direct resistance profile for an electrical pulse induced resistance change deviceX. Chen, N. J. Wu, J. Strozier — 2005
• Colossal electroresistance effect at metal electrode/La1−xSr1+xMnO4 interfacesY. Tokunaga, Y. Kaneko, J. P. He — 2006
• Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interfaceA. Baikalov, Y. Q. Wang, B. Shen — 2002
• Effect of the Field Dependent Permittivity and Interfacial Layer on Ba1-xKxBiO3/Nb-Doped SrTiO3 Schottky JunctionsTetsuya Yamamoto, Seiji Suzuki, Hiroshi Suzuki — 1997
• Inverse tunnel magnetoresistance in all-perovskite junctions of La 0.7 Sr 0.3 MnO 3 / SrTiO 3 / SrRuO 3Keisuke Takahashi, Akihito Sawa, Y. Ishii — 2003
• Resistive switching mechanism of TiO2 thin films grown by atomic-layer depositionByung Joon Choi, Dong Seop Jeong, Seong Keun Kim — 2005
• Field-induced resistive switching in metal-oxide interfacesS. Tsui, A. Baikalov, J. Cmaidalka — 2004
• Interfaces of correlated electron systems: proposed mechanism for colossal electroresistance.Takashi Oka, Naoto Nagaosa — 2005
• Colossal Electro-Resistance Memory Effect at Metal/La2CuO4 InterfacesAkihito Sawa, Takeshi Fujii, M. Kawasaki — 2005
• Electrical observations of filamentary conductions for the resistive memory switching in NiO filmsDongso Kim, Sunae Seo, Seung‐Eon Ahn — 2006
• Nonvolatile memory with multilevel switching: a basic model.M. J. Rozenberg, Isao Inoue, M. J. Sánchez — 2004
• Dielectric Constant of Strontium Titanate at Low TemperaturesE. Sawaguchi, Atsushi Kikuchi, Yōichi Kodera — 1962
• Electric-pulse-induced reflectance change in the thin film of perovskite manganiteKazutaka Aoyama, K. Waku, Shutaro Asanuma — 2004
• Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3 All-Oxide-Type Schottky JunctionsTetsuya Yamamoto, Seiji Suzuki, Kenichi Kawaguchi — 1998
• Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsShangqing Liu, N. J. Wu, A. Ignatiev — 2000
• Interface resistance switching at a few nanometer thick perovskite manganite active layersAkihito Sawa, Toshihiro Fujii, M. Kawasaki — 2006
• Conductivity switching characteristics and reset currents in NiO filmsSunae Seo, Myoung‐Jae Lee, David H. Seo — 2005
• Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interfaceAkihito Sawa, Toshihiro Fujii, M. Kawasaki — 2004
• Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystalsYutaka Watanabe, J. G. Bednorz, Alexander Bietsch — 2001
• Metal-insulator transitionsMasatoshi Imada, A. Fujimori, Yoshinori Tokura — 1998

Cited by

• Decoupling electrochemical reaction and diffusion processes in ionically-conductive solids on the nanometer scale.Philip S Cho — 2010
• Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3Haiyang Peng, Tom Wu — 2009
• Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films.Robert J. Pekkanen — 2019
• The Materials Science of Titanium Dioxide MemristorsMatthew D. Pickett — 2010
• Leakage current and resistive switching mechanisms in SrTiO3Shahin Mojarad — 2013
• Memristor, a Nano-Scaled Element for the Computer Memory: A Mini-Review with Some New Results for an ac-Driven MemristorElena Zhitlukhina — 2015
• Influence of cation off-stoichiometry on transport properties of metal/Nb-SrTiO3 junctionsDaisuke Kan, Takuya Shimizu, Yuichi Shimakawa — 2015
• Resonant tunnelling in a quantum oxide superlatticeWoo Seok Choi, Sang A Lee, Jeong Ho You — 2015
• Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO3:Nb junctionsS. Hirose, Hideyo Okushi, Shigenori Ueda — 2015
• Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctionsH. J. Zhang, X. P. Zhang, Jueli Shi — 2009
• Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctionsMilan Tomášek, T. Pleceník, Martin Truchlý — 2011
• Effects of interface states on the transport properties of all-oxide La 0.8 Sr 0.2 CoO 3 /SrTi 0.99 Nb 0.01 O 3 p-n heterojunctionsF. Y. Bruno, Javier García‐Barriocanal, Miriam G. Torija — 2008
• Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3Xin’an Chen, Xiaobai Ma, Yumeng Yang — 2011
• Effect of superconductivity on the electronic transport and capacitance of La1.85Sr0.15CuO4∕Nb doped SrTiO3 heterojunctionJueli Shi, Yonggang Zhao, Hang‐Huang Zhang — 2008
• Resistive switching effect in SrTiO3−δ∕Nb-doped SrTiO3 heterojunctionMu Cui Ni, S. M. Guo, Haiyan Tian — 2007
• Heterojunction of Fe(Se1−xTex) superconductor on Nb-doped SrTiO3Chun-Feng Wu, Huai-Che Chang, Jason Luo — 2010
• Fermi level shift in La1−xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi0.99Nb0.01O3Akihito Sawa, Atsushi Yamamoto, Hiroyuki Yamada — 2007
• Bias-dependent rectifying properties of n-n manganite heterojunctions La1−xCaxMnO3/SrTiO3:Nb (x=0.65–1)Weiming Lü, Jirong Sun, D. J. Wang — 2008
• Resistive switching phenomena: A review of statistical physics approachesJae Sung Lee, Shinbuhm Lee, Tae Won Noh — 2015
• Temperature-dependent transport and transient photovoltaic properties of La2/3Ca1/3MnO3/Nb:SrTiO3 heteroepitaxial p-n junctionHao Ni, S. L. Da, Kun Zhao — 2012

Related papers

• Back‐to‐back connected asymmetric Schottky diodes with series resistance as a single diodeJ. Osvald — 2015
• Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)Woojin Ahn, Ogyun Seok, Min-Woo Ha — 2013
• Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctionsChun‐Ying Huang, Pei-Te Lin, Hao-Che Cheng — 2019
• Rectified Schottky diodes based on PEDOT:PSS/InGaZnO junctionsChing-Hsiang Chang, Chao-Jui Hsu, Chung‐Chih Wu — 2017
• Effect of metal contact size on the metal-semiconductor junction characteristicsShashikant P. Patole, Ahmed E. Ali, Fatmah Alkindi — 2018
• A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InPC. Varenne, Jérôme Brunet, Alain Pauly — 2009
• Thermally stable Ir/n-ZnO Schottky diodesSheng‐Joue Young, Shoou‐Jinn Chang, Liang‐Wen Ji — 2011
• Study of Schottky barriers on n-type GaN grown by LP-MOCVDJ. D. Guo, Ming Feng, Fu‐Ming Pan — 1995
• Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metalsYao Yao, Raveena Gangireddy, Jae Woo Kim — 2017