Electronic structure of the Si(111)2 x 1 surface by scanning-tunneling microscopy.

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Summary

Mesure des variations du courant tunnel en fonction de la tension, de la position laterale et de the distance pointe W-surface and determination of la densite d'etats a partir de the conductivite differentielle.

Type
article
Published
1986-11-17
Cited by
438
References
0

Keywords

Scanning tunneling microscope, Scanning tunneling spectroscopy, Surface (topology), Quantum tunnelling, Surface states

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