Electronic structure of the Si(111)2 x 1 surface by scanning-tunneling microscopy.
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Summary
Mesure des variations du courant tunnel en fonction de la tension, de la position laterale et de the distance pointe W-surface and determination of la densite d'etats a partir de the conductivite differentielle.
- Type
- article
- Published
- 1986-11-17
- Cited by
- 438
- References
- 0
- OpenAlex
- https://openalex.org/W1982505882
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:30150654
Keywords
Scanning tunneling microscope, Scanning tunneling spectroscopy, Surface (topology), Quantum tunnelling, Surface states
References
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