Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Keywords

Light-emitting diode, Optoelectronics, Materials science, Quantum efficiency, Diode

References

• 250nmAlGaN light-emitting diodesV. Adivarahan, Wenhong Sun, A. Chitnis — 2004
• Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effectHideki Hirayama, Atsuhiro Kinoshita, T. Yamabi — 2002
• Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layerNoritoshi Maeda, Hideki Hirayama — 2013
• Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersA. Kinoshita, Hideki Hirayama, M. Ainoya — 2000
• High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal PerformanceJames Grandusky, Shawn R. Gibb, Mark C. Mendrick — 2011
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%Max Shatalov, Wenhong Sun, A. V. Lunev — 2012
• 227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation DensityHideki Hirayama, Norimichi Noguchi, Tohru Yatabe — 2008
• Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase EpitaxyToru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata — 2012
• 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphireHideki Hirayama, Tohru Yatabe, Norimichi Noguchi — 2007
• Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laserTakayoshi Takano, Yoshinobu Narita, Akihiko Horiuchi — 2004
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nmWenhong Sun, V. Adivarahan, M. Shatalov — 2004
• An aluminium nitride light-emitting diode with a wavelength of 210 nanometresYoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto — 2006
• AlGaN/GaN quantum well ultraviolet light emitting diodesJung Han, Mary H. Crawford, R. J. Shul — 1998
• Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wellsHideki Hirayama, Yasushi Enomóto, Atsuhiro Kinoshita — 2002
• Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral regionHideo Kawanishi, Masanori Senuma, Mao Yamamoto — 2006
• 284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) SubstratesSachie Fujikawa, Hideki Hirayama — 2011
• Correlation between carrier localization and efficiency droop in AlGaN epilayersJ. Mickevičius, Gintautas Tamulaitis, M. S. Shur — 2013
• Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNToshio Nishida, Hisao Saito, Naoki Kobayashi — 2001
• Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN TemplatesTakuya Mino, Hideki Hirayama, Takayoshi Takano — 2011
• Development of 260 nm band deep-ultraviolet light emitting diodes on Si substratesTakuya Mino, Hideki Hirayama, Takayoshi Takano — 2013

Cited by

• Structural and optical properties of AlN grown by solid source solution growth methodYoshihiro Kangawa, Hiroshige Suetsugu, Michael Knetzger — 2015
• Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlNYoshihiro Kangawa, Akira Kusaba, Hiroaki Sumiyoshi — 2015
• Tunnel junction enhanced nanowire ultraviolet light emitting diodesA. T. M. Golam Sarwar, Brelon J. May, Julia I. Deitz — 2015
• Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x NP. Arivazhagan, R. Ramesh, Ramadoss Roop Kumar — 2016
• Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayerRyan G. Banal, Masataka Imura, Yasuo Koide — 2015
• Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiencySatoshi Kurai, Koji Anai, Hideto Miyake — 2014
• Numerical study of current spreading and light extraction in deep UV light-emitting diodeXinhui Chen, Yuh‐Renn Wu — 2015
• HVPE growth of AlXGa1-XN templates for UV-LED applicationsChi-Tsung Tsai, Jia-Hao Liang, Tsung‐Yen Tsai — 2015
• Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructureShin‐ichiro Inoue, Naoki Tamari, Toru Kinoshita — 2015
• Interband tunneling for hole injection in III-nitride ultraviolet emittersYuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson — 2015
• A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescenceM. Julkarnain, T. Fukuda, Norihiko Kamata — 2015
• Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDsAdil Sarwar, Brelon J. May, Roberto C. Myers — 2016
• Modeling and optimization of p-AlGaN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs.Xinhui Chen, K.-P. Ho, Yuh‐Renn Wu — 2015
• Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodesYanan Guo, Yun Zhang, Junxi Wang — 2015
• InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substratesTakuya Ozaki, Mitsuru Funato, Yoichi Kawakami — 2015
• A Brief Review of III-Nitride UV Emitter Technologies and Their ApplicationsMichael Kneissl — 2016
• Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrationsSatoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu — 2016
• Direct growth of thick AlN template on micro-circle patterned-si substrateBinh Tinh Tran, Hideki Hirayama, Noritoshi Maeda — 2015
• AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization DopingJianjun Chang, Dunjun Chen, Junjun Xue — 2016
• Optimization of AlN substrate geometry for AlGaN-based deep-ultraviolet light-emitting diodesManabu Taniguchi, Guo‐Dong Hao, Kousei Nakaya — 2015

Related papers

• Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%Panpan Li, Hongjian Li, Yifan Yao — 2023
• Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nmPanpan Li, Hongjian Li, Haojun Zhang — 2021
• Improved Performance of Near UV GaN-Based Light Emitting Diodes With Asymmetric Triangular Multiple Quantum WellsHeng Li, Chia‐Jui Chang, Shiou-Yi Kuo — 2019
• Internal quantum efficiency and carrier injection efficiency of c‐plane, 101‾1 and 112‾2 InGaN/GaN‐based light‐emitting diodesJunjun Wang, Tobias Meisch, Dominik Heinz — 2015
• Proposal of New Measurement Method for Internal Quantum Efficiency of Light-Emitting DiodesByungjin Ma, Kwanhoon Lee — 2013
• Efficiency retention at high current injection levels in m-plane InGaN light emitting diodesX. Li, X. Ni, J. Lee — 2009
• Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array designJens Raß, Hyun Kyong Cho, Martin Guttmann — 2023
• Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layersHyunsoo Kim, Jaehee Cho, Jeong Wook Lee — 2007
• Highly efficient GaN-based light emitting diodes with micropitsM. Hao, Takashi Egawa, H. Ishikawa — 2006
• Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodesSangheon Han, Chu-Young Cho, Sangjun Lee — 2010