Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer
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- Type
- article
- Published
- 2013-11-01
- Cited by
- 80
- References
- 0
- OpenAlex
- https://openalex.org/W1793956850
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:93426973
Keywords
Light-emitting diode, Optoelectronics, Materials science, Layer (electronics), Quantum efficiency
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Cited by
- Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
- Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
- Control of growth mode in Mg-doped GaN/AlN heterostructure
- Solid-state lighting with wide band gap semiconductors
- Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer
- Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier
- Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN layer
- LED revolution: fundamentals and prospects for UV disinfection applications
- Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency
- Investigation of light extraction efficiency comparison of AlGaN-based deep- and mid-ultraviolet flip-chip light-emitting diodes with patterned sapphire substrate
- Tunnel-injected sub-260 nm ultraviolet light emitting diodes
- Enhancement of Emission Efficiency of Deep-Ultraviolet AlGaN Quantum Wells Through Surface Plasmon Coupling with an Al Nanograting Structure
- Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output
- Analysis of Polarization-Dependent Light Extraction and Effect of Passivation Layer for 230-nm AlGaN Nanowire Light-Emitting Diodes
- Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes
- Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
- Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings
- On the Al x Ga 1-x N/Al y Ga 1-y N/Al x Ga 1-x N (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes
- Deep-ultraviolet light source with a carbon nanotube cold-cathode electron beam
- Improving the Light‐Extraction Efficiency of AlGaN DUV‐LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector
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