Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Keywords

Equivalent series resistance, Materials science, Capacitance, Deep-level transient spectroscopy, Transient (computer programming)

References

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• Correlation of on‐wafer 400 V dynamic behavior and trap characteristics of GaN‐HEMTsTadahiro Imada, Daniel Piedra, T. Kikkawa — 2014
• Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on SiA. Y. Polyakov, N. B. Smirnov, Min-Woo Ha — 2013
• Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistorsAaron R. Arehart, A. Sasikumar, Siddharth Rajan — 2013
• Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowthA. Y. Polyakov, Dae‐Woo Jeon, In‐Hwan Lee — 2013
• Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctionsYa-Shi Hwang, Lu Liu, F. Ren — 2013
• Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctionsIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2014
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• Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopyZ.-Q. Fang, D. C. Look, Dae‐Hyeong Kim — 2005
• Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substratesA. Y. Polyakov, N. B. Smirnov, A. V. Govorkov — 2013
• Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopyA. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo — 2013
• Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowthE. B. Yakimov, П. С. Вергелес, A. Y. Polyakov — 2008
• Deep‐level transient spectroscopy: A new method to characterize traps in semiconductorsD. V. Lang — 1974
• Concurrent Hex-Band GaN Power Amplifier for Wireless Communication SystemsR. Fagotti, Alessandro Cidronali, Gianfranco Manes — 2011
• Effects of laterally overgrown n-GaN thickness on defect and deep level concentrationsA. Y. Polyakov, N. B. Smirnov, A. V. Govorkov — 2008
• Light-Emitting Diodes: Light-Emitting DiodesE. Fred Schubert — 2006

Cited by

• Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxyA. Y. Polyakov, N. B. Smirnov, E. B. Yakimov — 2016
• Electrical, Luminescent and Structural Properties of Nanopillar GaN/InGaN Multi-Quantum-Well Structures Prepared by Dry EtchingA. Y. Polyakov, Han-Su Cho, Jin-Hyeon Yun — 2016
• Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaNIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2016
• Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor depositionIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2016
• Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substratesA. Y. Polyakov, N. B. Smirnov, Andrei V. Turutin — 2016
• Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaNA. Y. Polyakov, N. B. Smirnov, E. B. Yakimov — 2016
• Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiCA. Y. Polyakov, N. B. Smirnov, А. А. Дорофеев — 2016
• Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticlesA. Y. Polyakov, N. B. Smirnov, E. B. Yakimov — 2016
• Current relaxation analysis in AlGaN/GaN high electron mobility transistorsA. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov — 2017
• Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodesIn‐Hwan Lee, Han-Su Cho, Kyung-Ryun Bae — 2017
• Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxyIn‐Hwan Lee, A. Y. Polyakov, E. B. Yakimov — 2017
• Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral rangesIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2017
• Low-frequency noise versus deep level transient spectroscopy of InAs/GaSb superlattice mid-wavelength infrared detectorsŁukasz Ciura, Andrzej Kolek, Jarosław Wróbel — 2017
• Electron irradiation of near‐UV GaN/InGaN light emitting diodesIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2017
• Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDsIn‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang — 2017
• Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experimentsIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2017
• Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain CurrentShrijit Mukherjee, Erin Patrick, Mark E. Law — 2017
• Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodesIn‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov — 2017
• Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damageA. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov — 2018
• Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron IrradiationA. Y. Polyakov, N. M. Shmidt, N. B. Smirnov — 2018

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