A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
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Summary
A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
- Type
- review
- Published
- 2013-08-01
- Cited by
- 768
- References
- 153
- Access
- Open access
- OpenAlex
- https://openalex.org/W1987596230
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:17101427
Keywords
Photodetection, Photodetector, Responsivity, Materials science, Semiconductor
References
- Si-doped AlxGa1-xN photoconductive detectors
- Electronic transport studies of single-crystalline In2O3 nanowires
- Photocurrent characteristics of individual ZnGa2O4 nanowires
- Individual β-Ga2O3 nanowires as solar-blind photodetectors
- Achieving fast oxygen response in individual β-Ga2O3 nanowires by ultraviolet illumination
- Electron affinity of AlxGa1−xN(0001) surfaces
- Enhancing ultraviolet photoresponse of ZnO nanowire device by surface functionalization
- Electrical and optical proprieties of photodiodes based on ZnSe material
- Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire
- Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector
- High‐Performance Broadband Photodetector Using Solution‐Processible PbSe–TiO2–Graphene Hybrids
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
- An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt
- Performance of an Ultraviolet Photoconductive Sensor Using Well-Aligned Aluminium-Doped Zinc-Oxide Nanorod Arrays Annealed in an Air and Oxygen Environment
- RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
- Electrical and photoelectric properties of Au-SiC Schottky barrier diodes
- Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles
- High quantum efficiency AlGaN solar-blind p-i-n photodiodes
- High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes
Cited by
- SiC for Advanced Biological Applications
- Ultrafast and High Sensitive UV/IR Photodetector Based on a Single SnO 2 Nanowire
- Silicon carbide: A unique platform for metal-oxide-semiconductor physics
- Dual mode UV/visible-IR gallium-nitride light detector
- Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus.
- Large enhancement of ultra-violet photoresponse of silicon-nanoparticle-embedded porous silicon thin films by rapid-thermal-oxidation treatment
- High-performance ultraviolet radiation sensors based on zinc oxide nanorods
- Single Si submicron wire photodetector fabricated by simple wet etching process
- Fabrication and characterization of Al:ZnO based MSM ultraviolet photodetectors
- Visible light detection using glancing angle deposited TiO2 nanowire arrays
- Thin films and nanostructures of niobium pentoxide : fundamental properties, synthesis methods and applications
- Solution‐Grown Organic Single‐Crystal Field‐Effect Transistors with Ultrahigh Response to Visible‐Blind and Deep UV Signals
- Density functional theory studies on Cs activation mechanism between GaN (0001) and Al0.25Ga0.75N (0001) surface
- Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance
- Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x N
- High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth
- Heterogeneously Integrated Optoelectronic Devices Enabled by Micro‐Transfer Printing
- The effect of surface cleaning on quantum efficiency in AlGaN photocathode
- Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes
- High dielectric constant and low optical band gap studies of La-modified Ba(Fe0.5Nb0.5)O3 ceramics
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