First-principles study of the phonon-limited mobility in n-type single-layer MoS2
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- Type
- article
- Published
- 2012-01-25
- Cited by
- 173
- References
- 6
- Access
- Open access
- OpenAlex
- https://openalex.org/W1554513334
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:997156
Keywords
Computer science, Type (biology), Algorithm
References
Cited by
- Hopping transport through defect-induced localized states in molybdenum disulphide
- High thermoelectric power factor in two-dimensional crystals of Mo S 2
- Optical and electrical properties of MoS2 and Fe-doped MoS2
- High‐Gain Phototransistors Based on a CVD MoS2 Monolayer
- Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
- Quantitative analysis of the temperature dependency in Raman active vibrational modes of molybdenum disulfide atomic layers.
- Surface effects on electronic transport of 2D chalcogenide thin films and nanostructures
- Structures and Phase Transition of a MoS2 Monolayer
- Stacking dependence of carrier transport properties in multilayered black phosphorous
- A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
- Prediction of new stable structure, promising electronic and thermodynamic properties of MoS3: Ab initio calculations
- Valleytronics in 2D materials
- Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
- Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
- Effects of high-k dielectric environment on the full ballistic transport properties of monolayer MoS2 FETs
- Negative differential resistance in monolayer WTe2 tunneling transistors
- Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives.
- A spincaloritronic battery
- Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors.
- Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
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