Surface structures, surfactants and diffusion at cubic and wurtzite GaN

Tosja Zywietz, Jörg Neugebauer, Michael Scheffler, John E. Northrup, Chris G. Van de Walle · MRS Internet Journal of Nitride Semiconductor Research · 1998

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Type: article
Published: 1998-01-01
Cited by: 37
References: 18
Access: Open access
DOI: https://doi.org/10.1557/s1092578300000983
OpenAlex: https://openalex.org/W45498578
Semantic Scholar: https://api.semanticscholar.org/CorpusID:91516269

Keywords

Wurtzite crystal structure, Materials science, Diffusion, Thermal diffusivity, Density functional theory

References

Numerical Recipes: FORTRANWilliam H. Press, Saul L A. Teukolsky, Brian N P. Flannery — 1990
Electronic structure and phase stability of GaAs1-xNx alloys.Jörg Neugebauer, Chris G. Van de Walle — 1995
Reconstructions of the GaN\(0001̄\) SurfaceArthur R. Smith, R. M. Feenstra, David W. Greve — 1997
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersM. Weyers, Michio Sato, Hiroaki Ando — 1992
Hydrogen in GaN: Novel aspects of a common impurity.Jörg Neugebauer, Chris G. Van de Walle — 1995
Mechanisms of island formation of alkali-metal adsorbates on Al(111).Jörg Neugebauer, Matthias Scheffler — 1993
Arsenic mediated reconstructions on cubic (001) GaNG. Feuillet, Hiroshi Hamaguchi, Katsumi Ohta — 1997
CLEAN AND AS-COVERED ZINC-BLENDE GAN(001) SURFACES : NOVEL SURFACE STRUCTURES AND SURFACTANT BEHAVIORJörg Neugebauer, Tosja Zywietz, Matthias Scheffler — 1997
EVALUATION OF THE SURFACE STOICHIOMETRY DURING MOLECULAR BEAM EPITAXY OF CUBIC GAN ON (001) GAASH. Yang, O. Brandt, M. Wassermeier — 1996
SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONSHendrik J. Monkhorst, J.D. Pack — 1976
Efficient pseudopotentials for plane-wave calculations.N. Troullier, José Luı́s Martins — 1991
Self-interaction correction to density-functional approximations for many-electron systemsJohn P. Perdew, Alex Zunger — 1981
Efficacious Form for Model PseudopotentialsLeonard Kleinman, D. M. Bylander — 1982
Epitaxial growth and optical transitions of cubic GaN films.D. Schikora, M. Hankeln, D. J. As — 1996
Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.O. Brandt, Hui Yang, B. Jenichen — 1995
Adatom diffusion at GaN (0001) and (0001̄) surfacesTosja Zywietz, Jörg Neugebauer, Matthias Scheffler — 1998
Phase Stability and Electronic Structure of GaAs 1– x N x AlloysJörg Neugebauer, Chris G. Van de Walle — 1995
Ground State of the Electron Gas by a Stochastic MethodDavid M. Ceperley, B. J. Alder — 1980
Numerical Recipes in FORTRANWilliam T. Vetterling, Saul A. Teukolsky, William H. Press — 1988
THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHODD. M. Ceperley — 2010

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Laser molecular beam epitaxial growth and properties of III-nitride thin film heterostructures on siliconT. A. Rawdanowicz — 2006
Ab initio analysis of surface structure and adatom kinetics of group-III nitridesJörg Neugebauer — 2001
Role of hydrogen in surface reconstructions and growth of GaNChris G. Van de Walle, Jörg Neugebauer — 2002
Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfacesJames Grandusky, V. K. Jindal, James E. Raynolds — 2009
Structure of clean and arsenic-covered GaN(0 0 0 1) surfacesV. Ramachandran, C. D. Lee, R. M. Feenstra — 2000
Kinetic Process of Polarity Selection in GaN Growth by RF‐MBEKe Xu, N. Yano, A.W. Jia — 2001
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devicesC. Kirchner, V. Schwegler, Franz Eberhard — 2000
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performanceP. Kandaswamy, F. Guillot, E. Bellet‐Amalric — 2008
High-nitrogen-pressure growth of GaN single crystals: doping and physical propertiesStanisław Krukowski, Michał Boćkowski, B. Łucznik — 2001
THE ADSORPTION OF OXYGEN AT GAN SURFACESTosja Zywietz, Jörg Neugebauer, Matthias Scheffler — 1999
Arsenic Incorporation in Gallium Nitride grown by Metalorganic Chemical Vapor Deposition using Dimethylhydrazine and TertiarybutylarsenicS Kellermann, K. M. Yu, E. E. Häller — 2000
A theoretical study of O chemisorption on GaN (0001)/(0001) surfacesJ. Elsner, Rafael Gutiérrez, B. Hourahine — 1998
A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growthAmit A. Gokhale, T. F. Kuech, Manos Mavrikakis — 2007
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystalsÉric Frayssinet, W. Knap, Stanisław Krukowski — 2001
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Interplay between GaN polarity and surface reactivity towards atomic hydrogenMaría Losurdo, Maria M. Giangregorio, P. Capezzuto — 2004
Formation of Titanium Nitride on the GaN(0001) Surface: A Density Functional Theory StudyCésar Ortega López, William López‐Pérez, Rafael González‐Hernández — 2013
Theoretical study of Ni adsorption on the GaN(0 0 0 1) surfaceRafael González‐Hernández, William López, César Ortega — 2010
Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfacesMakoto Itoh — 2001
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxyJelena Ristić, E. Calleja, Sergio Fernández‐Garrido — 2008

Surface structures, surfactants and diffusion at cubic and wurtzite GaN

Keywords

References

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