First principles study of wurtzite and zinc blende GaN: a comparison of the electronic and optical properties
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- Type
- article
- Published
- 2005-03-07
- Cited by
- 37
- References
- 23
- OpenAlex
- https://openalex.org/W2077973134
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:122399652
Keywords
Wurtzite crystal structure, Zinc, Condensed matter physics, Band gap, Density functional theory
References
- Properties of group III nitrides
- Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method.
- Lattice parameters of gallium nitride
- High-pressure properties of wurtzite- and rocksalt-type aluminum nitride.
- Cubic-phase GaN light-emitting diodes
- Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Fundamental energy gap of GaN from photoluminescence excitation spectra
- Deposition factors and band gap of zinc-blende AlN
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
- Crystal structure refinement of AlN and GaN
- SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS
- Epitaxial growth and optical transitions of cubic GaN films.
- Quasiparticle band structure of AlN and GaN.
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.
- "Special points for Brillouin-zone integrations"—a reply
- Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.
- Soft self-consistent pseudopotentials in a generalized eigenvalue formalism.
- Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium.
Cited by
- High intensity enhancement of unidirectional propagation of a surface plasmon polariton beam in a metallic slit-groove nanostructure
- Wide bandgap semiconductors for harsh environment imaging: temperature dependence of p-n junction detector efficiency
- Theoretical Study on the Optical and Electrical Properties of Al x Ga 1−x N Crystals
- Electronic structure and optical properties of zinc-blende GaN
- Theoretical study of the structural, electronic and dynamical properties of rocksalt ScN and GaN
- First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1−xCoxX (X=S, Se, Te)
- First principle study of Ce doping and related complexes in GaN
- Calculation of Electronical and Optical Properties of PtN
- First-principles prediction of the structural and electronic properties of GaxY1−xN compounds
- First-Principles Studies of the Structural and Electronic Properties of the (Ga1-xZnx)(N1-xOx) Solid Solution Photocatalyst
- Influence of crystal structure and formation energies of impurities (Mg, Zn and Ca) in zinc blende GaN
- Time-dependent density functional theory study on spectrum properties of Mg-doped GaN
- Structural and optoelectronic properties of amorphous GaN thin films
- First‐principles investigation of the electronic structures of edge dislocations in GaN
- Interband tansition and electronic structures in strained InxGa1−xN/GaN multiple quantum well
- Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts.
- COMPARISON OF ELECTRONIC AND OPTICAL PROPERTIES OF GaN MONOLAYER AND BULK STRUCTURE: A FIRST PRINCIPLE STUDY
- First-principle electronic, elastic, and optical study of cubic gallium nitride.
- Study of Cs/NF3 adsorption on GaN (0 0 1) surface
- Electronic and optical properties of GaN under pressure: DFT calculations
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