Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method
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- Type
- article
- Published
- 2023-06-11
- Cited by
- 0
- References
- 10
- OpenAlex
- https://openalex.org/W4390189800
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:266558355
Keywords
Passivation, Crystallization, Dangling bond, Crystalline silicon, Materials science
References
- Abruptness of a-Si :H/c-Si interface revealed by carrier lifetime measurements
- Amorphous-silicon formation by rapid quenching: A molecular-dynamics study.
- Model for a-Si: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
- ReaxFF: A Reactive Force Field for Hydrocarbons
- Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*
- Interdigitated back contact silicon heterojunction solar cells: Towards an industrially applicable structuring method
- Reactive Force-Field Molecular Dynamics Study of SiGe Thin Film Growth in Plasma Enhanced Chemical Vapor Deposition Processes
- Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on SiliconGermanium Alloy Growth by PECVD Techniques
- Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool
- Modelling and Simulation in Materials Science and Engineering Visualization and analysis of atomistic simulation data with OVITO – the Open Visualization Tool
- Evaluation of Structural and Mechanical Properties of Amorphous Silicon Surfaces by a Combination Approach of Ab-initio and Classical Molecular Dynamics
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