Electronic properties of Bi-doped GaAs(001) semiconductors.

J. Honolka, C. Hogan, M. Vondráček, Y. Polyak, F. Arciprete · Physical Review Materials · 2018

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Type: article
Published: 2018-06-21
Cited by: 1
References: 48
Access: Open access
DOI: https://doi.org/10.1103/physrevmaterials.3.044601
arXiv: https://arxiv.org/abs/1806.08256
OpenAlex: https://openalex.org/W2809441993
Semantic Scholar: https://api.semanticscholar.org/CorpusID:118897863

Keywords

Molecular beam epitaxy, Photoemission spectroscopy, Annealing (glass), Electronic structure, Band gap

References

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Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyT.‐C. Chiang, R. Ludeke, Masakazu Aono — 1983
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopyE. Placidi, Conor Hogan, F. Arciprete — 2006
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Unfolding the band structure of disordered solids: from bound states to high-mobility Kane fermionsOleg Rubel, A. Bokhanchuk, S. J. Ahmed — 2014
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterizationRobert D. Richards, F. Bastiman, J.S. Roberts — 2015
Geometry and electronic structure of GaAs(001)(2 x 4) reconstructions.W. G. Schmidt, F. Bechstedt — 1996
Screened hybrid density functionals applied to solids.Joachim Paier, Martijn Marsman, Kerstin Hummer — 2006
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsE. A. Kraut, R. W. Grant, J. R. Waldrop — 1980
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Theoretical study of the effects of isovalent coalloying of Bi and N in GaAsAnderson Janotti, Su‐Huai Wei, Shengbai Zhang — 2002
Two-dimensional electronic structure Ei(ki||,kiperp) of GaAs(001) studied by angle-resolved photoemission.Yong Q. Cai, A. P. J. Stampfl, J.D. Riley — 1992
Surface band structure of MBE-grown GaAs(001)-2 × 4P.K. Larsen, J D van der Veen — 1982
Spin-orbit coupling with ultrasoft pseudopotentials: Application to Au and PtAndrea Dal Corso, Adriano Mosca Conte — 2005
Photoemission studies of the band bending on MBE‐grown GaAs(001)Stefan P. Svensson, J. Kanski, T. G. Andersson — 1984
Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communicationK. Yamashita, Masahiro Yoshimoto, Kunishige Oe — 2006
HIGH-RESOLUTION ANGLE-RESOLVED PHOTOEMISSION STUDY OF LASBHiroshi Kumigashira, Hyeong‐Do Kim, Takahiro Ito — 1998

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Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) AlloysE. Tisbi, E. Placidi, Rita Magri — 2020

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