Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate
Explore this paper's citation graph
- Type
- article
- Published
- 2016-10-01
- Cited by
- 0
- References
- 13
- OpenAlex
- https://openalex.org/W2744914641
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:27858262
Keywords
Pentacene, Gate dielectric, Thin-film transistor, Materials science, Optoelectronics
References
- High-k gate dielectrics for CMOS technology
- A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor
- Recent Progress in Organic Electronics: Materials, Devices, and Processes
- Pentacene organic thin-film transistor with HfYO gate dielectric made on adhesive vacuum tape
- Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
- The work function of the elements and its periodicity
- Improved Performance of Pentacene OTFTs With HfLaO Gate Dielectric by Using Fluorination and Nitridation
- Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
- High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation
- Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths
- Effect of Gate Electrode Work‐Function on Source Charge Injection in Electrolyte‐Gated Organic Field‐Effect Transistors
- Organic Field‐Effect Transistors
- Organic thin film transistors
Cited by
No citing papers recorded for this paper.
Related papers
- Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
- Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
- Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions
- Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO 2 Gate Dielectric
- Interface roughness effect between gate oxide and metal gate on dielectric property
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- A replacement of high-k process for CMOS transistor by atomic layer deposition
- The Technology of EOT Control in High k Dielectric/metal Gate Electrode CMOS Device
- Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics