Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond
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- Type
- article
- Published
- 2016-06-22
- Cited by
- 19
- References
- 65
- Access
- Open access
- OpenAlex
- https://openalex.org/W2473601223
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:99636340
Keywords
Acceptor, Condensed matter physics, Atomic physics, Ionization, Diamond
References
- Semiconductors: Data Handbook
- Properties of Group-IV, III-V and II-VI Semiconductors: Adachi/Properties of Group-IV, III-V and II-VI Semiconductors
- Electrostatic Model of Edge Luminescence of Heavily Doped Degenerate Semiconductors
- Freie Elektronen in Festkörpern
- Modern physics from an elementary point of view
- Quantum and semi-classical percolation and breakdown in disordered solids
- Holes in boron-doped diamond: comparison between experiment and an improved model
- Carrier transport in homoepitaxial diamond films with heavy phosphorus doping
- Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction
- A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
- Exchange energy of a free electron in a semiconductor
- Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga
- Charge transport in boron-doped diamond thin films
- Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications
- Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands
- Development of Conductive Boron-Doped Diamond Electrode: A microscopic, Spectroscopic, and Voltammetric Study
- Characterization of Boron-Doped Diamond Epitaxial Films
- Band tails in semiconductors
- Doping‐induced changes in the valence band edge structure of homoepitaxial B‐doped diamond films below Mott's critical density
- Characterization of boron doped diamond epilayers grown in a NIRIM type reactor
Cited by
- Research on band-edge emission properties and mechanism of high-quality single-crystal diamond
- Drift-diffusion model of hole migration in diamond crystals via states of valence and acceptor bands
- Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures
- Модель стационарной миграции свободных и прыгающих между акцепторами дырок в кристаллическом полупроводнике
- A Phenomenological Model of Mott's Insulator–Metal Phase Transition in 3D and 2D Boron‐Doped Diamond
- Thermal ionization energy of hydrogen-like impurities in semiconductor materials
- Carrier recombination parameters in diamond after surface boron implantation and annealing
- Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition
- Negative Hall Factor of Acceptor Impurity Hopping Conduction in p-Type 4H-SiC
- Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects
- Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities
- Mathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on them
- An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth
- Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors
- Activation Energy of DC Hopping Conductivity of Lightly Doped Weakly Compensated Crystalline Semiconductors
- Bipolar transport in diamond under photo-excitation: Evidence of free charge scattering by excitons
- DC Conductivity and Mobility of a Degenerate Electron Gas in Heavily Doped GaN Crystals at Room Temperature
- Drift-diffusionmodel of hole migration in diamond crystals via states of valence and acceptor bands
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