A Study on Improvement of the Light Emitting Efficiency on Flip Chip LED with Patterned Sapphire Substrate by the Optical Simulation
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- Type
- article
- Published
- 2015-10-01
- Cited by
- 0
- References
- 15
- Access
- Open access
- OpenAlex
- https://openalex.org/W2408673107
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:137856702
Keywords
Quantum efficiency, Total internal reflection, Flip chip, Materials science, Optoelectronics
References
- Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
- Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
- Light‐Extraction Enhancement of GaInN Light‐Emitting Diodes by Graded‐Refractive‐Index Indium Tin Oxide Anti‐Reflection Contact
- High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
- Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes
- Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
- Analysis of light-emitting diodes by Monte Carlo photon simulation.
- Enhance Light Emitting Diode Light Extraction Efficiency by an Optimized Spherical Cap-Shaped Patterned Sapphire Substrate
- 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
- Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
- Improved Light Extraction of Nitride-Based Flip-Chip Light-Emitting Diodes Via Sapphire Shaping and Texturing
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