Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.

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Summary

This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.

Type
article
Published
2007-09-08
Cited by
3,446
References
36
Access
Open access

Keywords

Graphene, Materials science, Doping, Transistor, Optoelectronics

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