Role of scattering in nanotransistors

Keywords

Scattering, Scattering length, Channel (broadcasting), Physics, Scattering theory

References

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• Ballistic metal-oxide-semiconductor field effect transistorKenji Natori — 1994
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• Essential physics of carrier transport in nanoscale MOSFETsMark Lundstrom, Zhibin Ren — 2000
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Cited by

• Modélisation et simulation du transport quantique dans les transistors MOS nanométriquesMarc Bescond — 2004
• Tunneling and intersubband coupling in ultra-thin body double-gate MOSFETsViktor Sverdlov, A. U. Gehring, Hans Kosina — 2005
• Quantum mechanical modeling of advanced sub-10 nm MOSFETsThomas J. Walls, Viktor Sverdlov, Konstantin K. Likharev — 2003
• Exploring new channel materials for nanoscale CMOS devices: A simulation approachAnisur Rahman — 2005
• Modeling Quantum Transport in Nanoscale TransistorsRamesh Venugopal — 2013
• Geometrical scaling effects on carrier transport in ultrathin-body MOSFETsvan der Jan-Laurens P.J. Steen — 2011
• Monte Carlo study of current variability in UTB SOI DG MOSFETsCraig Riddet — 2008
• Transport enhancement techniques for nanoscale MOSFETsA. Khakifirooz — 2008
• Theoretical analysis of prospective nanoelectronic devicesT. Walls — 2008
• Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approachesYann‐Michel Niquet, Việt Hùng Nguyễn, François Triozon — 2013
• Influence of mechanical strain in Si and Ge p-type double gate MOSFETsManel Moussavou, Nicolas Cavassilas, Eddy Dib — 2015
• Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo MethodsHimadri S. Pal, Dmitri E. Nikonov, Raseong Kim — 2012
• Device modeling in the Wigner pictureMihail Nedjalkov, Hans Kosina, P. Schwaha — 2010
• Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistorsManel Moussavou, Nicolas Cavassilas, Elias Dib — 2015
• Modeling nanoscale quasi-ballistic MOS transistorsAnurag Mangla — 2014
• Schrödinger Equation Monte Carlo-3D for simulation of nanoscale MOSFETsKeng-Ming Liu, Wanqiang Chen, Leonard F. Register — 2007
• Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulationV. Aubry-Fortuna, Arnaud Bournel, Philippe Dollfus — 2006
• Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistorM. D. Croitoru, V. N. Gladilin, V. M. Fomin — 2004
• Impact of phonon scattering in a Si GAA nanowire FET with a single donor in the channelA. Martı́nez, K. Kálna, M. Aldegunde — 2011
• Towards Quantum EngineeringA. F. J. Levi — 2008

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