Depth profiling by ion-beam spectrometry

Keywords

Ion beam analysis, Ion beam, Ion, Beam (structure), Mass spectrometry

References

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Cited by

• The influence of the beam charge state on the analytical calculation of RBS and ERDA spectraN.P. Barradas, Marcel Kosmata, Daniel Hanf — 2016
• Application of the Bragg-profiling technique to the analysis of metallurgical and optical surface layersP. Eichinger, Qiong Li, R. Leutenecker — 1983
• Solute diffusion in α-Zr: Rutherford backscattering and secondary-ion mass spectrometry studyG.M. Hood, Thomas Laursen, J. A. Jackman — 1991
• Status of ion beam data analysis and simulation softwareE. Raühala, N.P. Barradas, Stjepko Fazinić — 2006
• Temperature and energy dependence of ion‐beam synthesis of epitaxial Si/CoSi2/Si heterostructuresKlaus Radermacher, S. Mantl, K. Kohlhof — 1990
• New computer iterative fitting program DVBS for backscattering analysisVlastimil Boháč, D.M. Shirokov — 1994
• RBS/simulated annealing analysis of silicide formation in Fe/Si systemsN.P. Barradas, C. Jeynes, K.P. Homewood — 1998
• Investigations of MBE-Grown Superlattices with Sb Delta-Layers in Silicon by Rutherford Backscattering SpectrometryK. Lenkeit, A. Pirrwitz, А. И. Никифоров — 1990
• Ion‐induced C segregation on Fe films on pyrolytic graphite under high‐fluence D bombardmentA. Santaniello, J. Bohdansky, J. Roth — 1988
• Algorithms for the rapid simulation of Rutherford backscattering spectraLawrence Doolittle — 1985
• ERDA with very heavy ion beamsW. Assmann, John Davies, G. Dollinger — 1996
• Quantitative elastic recoil detectionA. Bergmaier, G. Dollinger, C.M. Frey — 1995
• Modifications by rare gas bombardment of aluminium nitride formed by direct implantationStéphane Lucas, F. Bodart, G. Terwagne — 1989
• The influence of the substrate temperature on the formation of buried epitaxial CoSi2 by ion implantationKlaus Radermacher, S. Mantl, K. Kohlhof — 1990
• Hafnium diffusion in Zircaloy-2 and Zr-2.5 wt.% Nb: A Rutherford backscattering studyThomas Laursen, G.M. Hood, R. Belec — 1992
• Interactive personal-computer data analysis of ion backscattering spectraJaakko Saarilahti, E. Raühala — 1992
• Nuclear-reaction methods to measure boron diffusion in metallic glassesM.M. Kijek, D. W. Palmer, B. Cantor — 1986
• Formation of buried CoSi2 layers with ion beam synthesis at low implantation energiesR. Jebasinski, S. Mantl, L. Vescan — 1991
• Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) SiC. W. T. Bulle‐Lieuwma, A. H. van Ommen, L.J. van IJzendoorn — 1989
• Study of ionic movements during anodic oxidation of nitrogen-implanted aluminiumG. Terwagne, Stéphane Lucas, F. Bodart — 1990

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