Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
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Summary
Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
- Type
- article
- Published
- 2004-12-01
- Cited by
- 3,007
- References
- 29
- OpenAlex
- https://openalex.org/W2039780806
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:33709206
Keywords
Quantum tunnelling, Spintronics, Materials science, Magnetoresistance, Condensed matter physics
References
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- Maki analysis of spin-polarized tunneling in an oxide ferromagnet
- Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
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- Spin polarization of CrO2 at and across an artificial barrier.
- Spin-polarized electron tunneling
- Current distribution effects in magnetoresistive tunnel junctions
- Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation
- Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction
- EFFECT OF FILM RESISTANCE ON LOW‐IMPEDANCE TUNNELING MEASUREMENTS
- Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy
- High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
- Complex band structure and tunneling through ferromagnet /Insulator /Ferromagnet junctions
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- Grazing incidence X-ray scattering from magnetic thin films and nanostructures
- Korrelationen zwischen struktureller Ordnung und elektrischen Transporteigenschaften in CoFeB|MgO|CoFeB Tunnelmagnetowiderstandselementen
- Artificial multilayers and nanomagnetic materials
- Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO
- A 4‐Fold‐Symmetry Hexagonal Ruthenium for Magnetic Heterostructures Exhibiting Enhanced Perpendicular Magnetic Anisotropy and Tunnel Magnetoresistance
- Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes
- Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory
- Commutation précessionelle de mémoire magnétique avec polariseur à anisotropie perpendiculaire
- Organic spintronic devices utilizing spin-injection, spin-tunneling and spin-dependent transport
- Magnetic Modeling of a Rotating Flux Concentrator System Designed to Mitigate Noise in Large Magnetic Sensors
- Coupling phenomena and scalability of CoFeB/Ru/CoFeB sandwiches
- A two-band model of spin-polarized transport in Fe/Cr/MgO/Fe magnetic tunnel junctions
- Spin Transport in Two-Dimensional Material Heterostructures
- Low Cost, Low Power, High Sensitivity Magnetometer
- Interface study of FeMgOFe magnetic tunnel junctions using 3D Atom Probe
- Nanocolonnes de GeMn : propriétés magnétiques et structurales à la lumière du synchrotron
- Spin-torque diode effect in magnetic tunnel junctions
- Propriétés magnétiques, électriques et structurales et transport polarisé en spin dans des structures hybrides MnAs-GaAs
- Strong Reduction of 1/f Noise by Carbon Doping in Epitaxial Fe/MgO(100) 12~ML/Fe Magnetic Tunnel Junctions with Barrier Defects
- Elaboration de jonctions tunnel magnétiques et de jonctions métal/oxyde/semi-conducteur pour l'étude du transport et de la précession de spin d'électrons chauds
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