An accelerated monotone iterative method for the quantum-corrected energy transport model
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Summary
A non-stationary monotone iterative method is proposed and analyzed for the quantum-corrected energy transport model in nanoscale semiconductor device simulation and it is analytically and numerically shown that the convergence rate of the method is optimal in the sense of Gummel's decoupling iteration.
- Type
- article
- Published
- 2008-06-01
- Cited by
- 11
- References
- 31
- OpenAlex
- https://openalex.org/W2035645376
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:205886879
Keywords
Monotone polygon, Decoupling (probability), Convergence (economics), Quantum, Applied mathematics
References
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- Macroscopic physics of the silicon inversion layer.
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- Monotone scheme for finite difference equations concerning steady-state prey-predator interactions☆
- Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems
- An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
- On accelerated monotone iterations for numerical solutions of semilinear elliptic boundary value problems
- A quantum corrected energy-transport model for nanoscale semiconductor devices
- An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
- Semiconductor Simulations Using a Coupled Quantum Drift-Diffusion Schr[o-umlaut]dinger-Poisson Model
- Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation
- A multi-purpose Schrödinger-Poisson Solver for TCAD applications
- A singular perturbation approach for the analysis of the fundamental semiconductor equations
- Boundary element monotone iteration scheme for semilinear elliptic partial differential equations
- Accelerated monotone iterative methods for finite difference equations of reaction-diffusion
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- An approximate Newton method for the solution of the basic semiconductor device equations
- A REVIEW ON THE QUANTUM DRIFT DIFFUSION MODEL
Cited by
- Approximations of quantum corrected energy-transport model with non-parabolic energy relaxation time
- Numerical methods for the Poisson-Fermi equation in electrolytes
- A quantum energy transport model for semiconductor device simulation
- Energy transport in semiconductor devices
- Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors
- Numerical methods for a quantum energy transport model arising in scaled MOSFETs
- Lecture Notes on Poisson-Nernst-Planck Modeling and Simulation of Biological Ion Channels
- A Quantum Corrected Poisson-Nernst-Planck Model for Biological Ion Channels
- Discrete monotone method for space-fractional nonlinear reaction–diffusion equations
- Ansgar Jüngel Dissipative quantum fluid models
- No . 42 / 2009 Energy Transport in Semiconductor Devices
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