Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
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- Type
- article
- Published
- 1999-02-15
- Cited by
- 585
- References
- 20
- OpenAlex
- https://openalex.org/W2031427556
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:15005308
Keywords
Pseudopotential, Local-density approximation, Wurtzite crystal structure, Lattice constant, Plane wave
References
Cited by
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- Theoretical study of BexZn1-xOBexZn1-xO alloys
- Scandium Nitride Thin Films for Thermoelectrics
- First principles calculation of thermal expansion coefficient. Part 1. Cubic metals
- Étude Raman de semi-conducteurs nitrures Couches minces et nanostructures
- Design of Transition-Metal Nitride Thin Films for Thermoelectrics
- First principles study on the spin unrestricted electronic structure properties of transition metal doped InN nanoribbons
- Electronic structure investigations of group III-nitrides surface and interfaces
- Etude optique de nanofils GaN et de microcavités GaN/AIN
- ESTUDO TEÓRICO DAS PROPRIEDADES ESTRUTURAIS E ELETRÔNICAS DO GaN E DO SEMICONDUTOR MAGNÉTICO Ga1-XMnXN NO BULK E NA SUPERFÍCIE
- First-Principles Investigation of Structural and Electronic Properties of the B_xGa_1-xN, B_xAl_1-xN, Al_xGa_1-xN and B_xAl_yGa_1-x-yN Compounds
- Structural and elastic stabilities of InN in both B4 and B1 phases under high pressure using density-functional perturbation theory
- First-Principles Study of Cubic BxIn1-xN Ternary Alloys
- Electronic structure, optical absorption and energy loss spectra of GaN graphitic sheet
- Ionization energy levels in Mn-doped InxGa1−xN alloys
- Diffusion anisotropy of poor metal solute atoms in hcp-Ti.
- Electronic Structure Magnetic Properties and Optical Properties of Co-doped AlN from First Principles
- Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks
- Ionization energy levels in C-doped InxGa1−xN alloys
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