Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
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- Type
- article
- Published
- 2003-07-22
- Cited by
- 116
- References
- 16
- Access
- Open access
- OpenAlex
- https://openalex.org/W2029925702
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:102343885
Keywords
Rutherford backscattering spectrometry, Nucleation, Atomic layer deposition, Silicon, Hydrogen
References
- High-resolution depth profiling in ultrathin Al2O3 films on Si
- Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
- Atomic transport during growth of ultrathin dielectrics on silicon
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics
- Materials Characterization of Alternative Gate Dielectrics
- Initial stage of oxidation of hydrogen-terminated silicon surfaces
- Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination
- Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
- Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
- Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry
- Spectroscopic studies of different aluminosilicate structures
- A detailed study on the growth of thin oxide layers on silicon using ozonated solutions
- Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina
- Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
- Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
Cited by
- Filmes finos dielétricos para a tecnologia do silício : processamento térmico e caracterização
- Er2O3 as a high-K dielectric candidate
- Imaging of oxide charges and contact potential difference fluctuations in atomic layer deposited Al2O3 on Si
- Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell
- Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation
- Annealing of Al2O3 thin films prepared by atomic layer deposition
- Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3
- Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al2O3 and HfO2
- Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide
- Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate
- Aluminum mobility and interfacial segregation in fully silicided gate contacts
- Carbon nanotube thin film transistors based on aerosol methods
- Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si
- Use of Mixed CH3-/HC(O)CH2CH2-Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111).
- Reactivity of selectively terminated single crystal silicon surfaces.
- Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor
- Effects of La2O3 Capping Layers Prepared by Different ALD Lanthanum Precursors on Flatband Voltage Tuning and EOT Scaling in TiN/HfO2/SiO2/Si MOS Structures
- Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility
- Functionalization of oxide-free silicon surfaces
- Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications
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