Source and Drain Parasitic Resistances of Amorphous Silicon Transistors: Comparison between Top Nitride and Bottom Nitride Configurations
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- Type
- article
- Published
- 1996-08-15
- Cited by
- 19
- References
- 0
- Access
- Open access
- OpenAlex
- https://openalex.org/W2021758457
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:121705270
Keywords
Silicon nitride, Materials science, Transistor, Thin-film transistor, Optoelectronics
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