n-type doping of oxides by hydrogen
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- Type
- article
- Published
- 2002-06-25
- Cited by
- 272
- References
- 18
- OpenAlex
- https://openalex.org/W2014501618
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:96415065
Keywords
Icon, Citation, Information retrieval, Download, Computer science
References
- Effect of interstitial hydrogen impurities on ferroelectric polarization in PbTiO3
- Hydrogen as a cause of doping in zinc oxide
- Origins of coexistence of conductivity and transparency in SnO(2).
- Electronic structure of MgO studied by angle-resolved ultraviolet photoelectron spectroscopy
- CORRECTIONS TO DENSITY-FUNCTIONAL THEORY BAND GAPS
- Electrochromism of W-oxide-based thin films : Recent advances
- Hydrogen in GaN: Novel aspects of a common impurity.
- Prediction of Flatband Potentials at Semiconductor‐Electrolyte Interfaces from Atomic Electronegativities
- Shallow versus deep hydrogen states in ZnO and HgO
- Self-interaction correction to density-functional approximations for many-electron systems
- CORRIGENDUM: Momentum-space formalism for the total energy of solids
- Defect structure and electronic donor levels in stannic oxide crystals
- Process parameter dependent property studies on CdO films prepared by DC reactive magnetron sputtering
- Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
- First-principles calculations for charged states of hydrogen atoms in SiO 2
- A universal trend in the binding energies of deep impurities in semiconductors
- Modern Aspects of Electrochemistry
- The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
- Ground State of the Electron Gas by a Stochastic Method
Cited by
- Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
- Hydrogen defects in tetragonal ZrO2 studied using density functional theory.
- Hydrogen diffusion in GaAs1―xNx
- An investigation of the performance and stability of zinc oxide thin-film transistors and the role of high-k dielectrics.
- Ferromagnetism in Mn- and Co-implanted ZnO nanorods
- Review of the Structural Stability, Electronic and Magnetic Properties of Nonmetal-Doped TiO_2 from First-Principles Calculations
- Hydrogen Effects on the Electrical Conductivity of Pulsed Laser Deposited ZnO Thin Films
- Der Frontkontakt der CdTe-Dünnschichtsolarzelle: Charakterisierung und Modifizierung von Puffer- und Fensterschichten und deren Grenzflächen
- Complex centers of hydrogen in tin dioxide
- Room‐Temperature‐Protonation‐Driven On‐Demand Metal–Insulator Conversion of a Transition Metal Oxide
- Effects of Hydrogen on the Electronic State and Electric Conductivity of the Rutile TiO 2 (110) Surface
- Die elektrischen Eigenschaften von Indiumoxid-Dünnschichten: in-situ Hall-Effekt-Messungen zur Aufklärung des Einflusses von Punktdefekten und Korngrenzen
- Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films
- Recent advances in processing of ZnO
- Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
- Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films
- Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions
- First-principles study of hydrogen configurations at the core of a high-angle grain boundary in cubic yttria-stabilized zirconia
- Muonium states in Ag2O studied by level crossing and RF resonance
- Hydrogen induced electric conduction in undoped ZnO and Ga-doped ZnO thin films: Creating native donors via reduction, hydrogen donors, and reactivating extrinsic donors
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