Quasiparticle band-structure calculations for C, Si, Ge, GaAs, and SiC using Gaussian-orbital basis sets.

Keywords

Quasiparticle, Physics, Plane wave, Random phase approximation, Electronic band structure

References

• Ground State of the Electron Gas by a Stochastic MethodDavid M. Ceperley, B. J. Alder — 1980

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• Correlation spectroscopy of surfaces, thin films, and nanostructuresJamal Berakdar — 2004
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• Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation: Application to Si, SiC, AlAs, InAs, NaH, and KHSébastien Lebègue∥, B. Arnaud, M. Alouani — 2003
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• First principles calculation of material properties of group IV elements and III-V compoundsBrad D. Malone — 2012
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• Accurate and Efficient Calculations on Strongly Correlated Minerals with the LDA+U Method: Review and PerspectivesMatteo Cococcioni — 2010
• Re-examining the electronic structure of germanium: A first-principle studyChinedu E. Ekuma, Mark Jarrell, Juana Moreno — 2013
• Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1×1)Neng-Ping Wang, Michael Rohlfing, Peter Krüger — 2005
• Band structure of functional oxides by screened exchange and the weighted density approximationJohn Robertson, K. Xiong, Stewart J. Clark — 2006
• Theoretical Aspects of the Optical Response of Semiconductor SurfacesF. Bechstedt, Olivia Pulci, W. G. Schmidt — 1999
• Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopyKatsuya Oguri, Tsunoi Takanobu, Keiko Kato — 2015

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