Surface Cu depletion of Cu(In,Ga)Se2 films: An investigation by hard X-ray photoelectron spectroscopy
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- Type
- article
- Published
- 2009-07-01
- Cited by
- 69
- References
- 18
- OpenAlex
- https://openalex.org/W2012591878
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:135520764
Keywords
X-ray photoelectron spectroscopy, Crystallite, Faceting, Materials science, Chalcopyrite
References
- Practical surface analysis: By auger and x-ray photoelectron spectroscopy
- Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)
- Cu depletion at the CuInSe2 surface
- Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges
- Cu-accumulation at the interface between sputter-(Zn,Mg)O and Cu(In,Ga)(S,Se)2 — A key to understanding the need for buffer layers?
- Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs
- Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2
- Investigation of coevaporated Cu(In,Ga)Se2 thin films in highly efficient solar cell devices
- KMC-1: a high resolution and high flux soft x-ray beamline at BESSY.
- Depth profile of the lattice constant of the Cu-poor surface layer in (Cu
- The high kinetic energy photoelectron spectroscopy facility at BESSY progress and first results
- Photoemission studies on Cu(In, Ga)Se2 thin films and related binary selenides
- Stability of surfaces in the chalcopyrite system
- Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductors
- HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS
- Characterization of CuInSe2 thin films by XPS
- 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
- New universal expression for the electron stopping power for energies between 200 eV and 30 keV
Cited by
- Correlating the Local Defect-Level Density with the Macroscopic Composition and Energetics of Chalcopyrite Thin-Film Surfaces.
- HAXPES studies of solid materials for applications in energy and information technology using the HIKE facility at HZB-BESSY II
- Surface composition deviation of Cu2ZnSnS4 derivative powdered samples
- The complex material properties of chalcopyrite and kesterite thin‐film solar cell absorbers tackled by synchrotron‐based analytics
- Heat Induced Passivation of CuInSe2 Surfaces: A Strategy to Optimize the Efficiency of Chalcopyrite Thin Film Solar Cells?
- Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy
- Nanoscale investigations of the electronic surface properties of Cu(In,Ga)Se2 thin films by scanning tunneling spectroscopy
- Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures
- Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn5Se8
- Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells
- Composition, morphology, and optical properties of CuInSe2 thin films electrodeposited using constant and pulsed potentials
- Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure
- Electronic effects of Cd on the formation of the CdS/CuInS2 heterojunction
- Impact of Mo density on Mo/CIGSe interfaces: An XPS study
- Exploring the p-n junction region in Cu(In,Ga)Se2 thin-film solar cells at the nanometer-scale
- Investigation of Cu-poor and Cu-rich Cu(In,Ga)Se2/CdS interfaces using hard X-ray photoelectron spectroscopy
- Experimental indication for band gap widening of chalcopyrite solar cell absorbers after potassium fluoride treatment
- New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20%
- Locally resolved investigation of wedged Cu(In,Ga)Se2 films prepared by physical vapor deposition using hard X-ray photoelectron and X-ray fluorescence spectroscopy
- Structural investigation of the Cu2Se–In2Se3–Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds
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