Stress Reduction of Ge2Sb2Te5 by Inhibiting Oxygen Diffusion
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- Type
- article
- Published
- 2008-09-01
- Cited by
- 2
- References
- 19
- Access
- Open access
- OpenAlex
- https://openalex.org/W2011683855
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:55312768
Keywords
Materials science, Oxygen, Stress (linguistics), Diffusion, Metastability
References
- Metallization: Theory and practice for VLSI and ULSI
- Crystallization Behavior and Physical Properties of Sb-Excess Ge2Sb2 + x Te5 Thin Films for Phase Change Memory (PCM) Devices
- Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
- Study of Oxygen-Doped GeSbTe Film and Its Effect as an Interface Layer on the Recording Properties in the Blue Wavelength
- Precise Stress Control of Ta Absorber using Low Stress Alumina Etching Mask for X-Ray Mask Fabrication
- Variation of internal stresses in sputtered Ta films
- Low‐stress tantalum absorbers deposited by sputtering for x‐ray masks
- Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)
- An ultra‐low stress tungsten absorber for x‐ray masks
- Low-cost and nanoscale non-volatile memory concept for future silicon chips
- Stress reduction during phase change in Ge2Sb2Te5 by capping TiN film
- Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5 Thin Film
- Crystal Structure of Oxygen/Nitrogen-Doped GeSbTe Phase-Change Media: Investigation Using Grazing Incidence X-ray Diffraction
- Mechanical stresses upon crystallization in phase change materials
- The Tension of Metallic Films Deposited by Electrolysis
- Structure of oxygen-doped Ge:Sb:Te films
- Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties
- Handbook Series on Semiconductor Parameters
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