Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Keywords

Materials science, Light-emitting diode, Optoelectronics, Indium tin oxide, Doping

References

• Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaNJune O Song, Kyoung-Kook Kim, Seong-Ju Park — 2003
• Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodesHyunsoo Kim, Dong-Joon Kim, Seong-Ju Park — 2001
• Effect of Thermal Annealing on Ga-Doped ZnO Films Prepared by Magnetron SputteringJinn‐Kong Sheu, Komin Shu, M. L. Lee — 2007
• InGaN light-emitting diodes with naturally formed truncated micropyramids on top surfaceJinn‐Kong Sheu, C.M. Tsai, M. L. Lee — 2006
• Indium tin oxide contacts to gallium nitride optoelectronic devicesTal Margalith, O. Buchinsky, Daniel A. Cohen — 1999
• Low Resistance Optically Transparent Contacts to p-type GaN Using Oxidized Ni/Au and ITO for LED ApplicationChien‐Hung Lin, Douglas L. Hibbard, A.A. Au — 2000
• Clock-tone regeneration due to higher order PMD in NRZ systemsZhongqi Pan, Qian Yu, Yiyuan Xie — 2003
• Light-Emitting Diodes: Light-Emitting DiodesE. Fred Schubert — 2006
• Light-Emitting Diodes: Resonant-cavity light-emitting diodesE. Schubert — 2003

Cited by

• An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical propertiesArindam Mallick, Sanjit Sarkar, Tushar K. Ghosh — 2015
• Growth and Anion Exchange Conversion of CH3NH3PbX3 Nanorod Arrays for Light-Emitting Diodes.Andrew Barnabas Wong, Minliang Lai, Samuel W. Eaton — 2015
• Fabrication of Polystyrene/ZnO Micronano Hierarchical Structure Applied for Light Extraction of Light-Emitting Devices.Peng Mao, Amulya krishna Mahapatra, Jing Chen — 2015
• Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cellsJie Bai, Modestos Athanasiou, Ti Wang — 2016
• Thermal Annealing Effects on the Performance of a Ga-Doped ZnO Transparent-Conductor Layer in a Light-Emitting DiodeChun-Han Lin, Yu-Feng Yao, Chia-Ying Su — 2015
• A Ga-doped ZnO transparent conduct layer for GaN-based LEDsZhen Liu, Wang Xiaofeng, Yang Hua — 2010
• Electroluminescence emission from light-emitting diode of p-ZnO/"InGaN/GaN… multiquantum well/n-GaNTae‐Young Park, Yong‐Seok Choi, Sang-Mook Kim — 2011
• Current Crowding Phenomenon: Theoretical and Direct Correlation With the Efficiency Droop of Light Emitting Diodes by a Modified ABC ModelLiancheng Wang, Zi‐Hui Zhang, Ning Wang — 2015
• Improved Output Power of Nitride-Based Light-Emitting Diodes With Convex-Patterned Sapphire SubstratesYu‐Ting Hsu, Cheng-Chang Yu, Kai-Feng Huang — 2012
• GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly UniformityJingchuan Yang, Yanli Pei, Bingfeng Fan — 2015
• Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layersWen Gu, Tao Xu, Jianhua Zhang — 2013
• Transparent conducting oxides for electrode applications in light emitting and absorbing devicesHuiyong Liu, V. Avrutin, N. Izyumskaya — 2010
• Linear facing target sputtering of the epitaxial Ga-doped ZnO transparent contact layer on GaN-based light-emitting diodesHyunsu Shin, Ju‐Hyun Lee, Joon Seop Kwak — 2013
• Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodesChih-Han Chen, Shoou‐Jinn Chang, Sheng-Po Chang — 2009
• Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode padsJinn‐Kong Sheu, I-Hsiu Hung, W. C. Lai — 2008
• Sintering of Ultrahigh Density and Highly Conductive ZnO-Ga2O3 Ceramic TargetsCun Qi Liu, Zhong Jian Zhang, Ling Gao — 2013
• Improved light extraction efficiency on GaN LEDs by an In2O3 nano-cone filmJan‐Tian Lian, Jian-Huei Ye, Jian‐Ye Liou — 2013
• Evolution of surface morphology of dry-etched ZnO with Cl2/Ar plasmaKuang‐Po Hsueh, Renjie Hou, C. J. Tun — 2009
• Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer depositionKuo-Yi Yen, Chien-Hua Chiu, Hsiao Chi-Ying — 2014
• Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrateZhiyun Zhang, Chonggao Bao, Qun Li — 2012

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